Dielectric composition, dielectric element, electronic component and laminated electric component
A dielectric composition, a dielectric element, an electronic component and a laminated electric component are disclosed. In an embodiment a dielectric composition has a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes a high-Bi phase in which the Bi concentration is at least 1.2 times the mean Bi concentration in the dielectric composition as a whole.
1. A dielectric composition comprising:
a perovskite crystal structure containing at least Bi, Na, Sr and Ti,
wherein the dielectric composition includes a high-Bi phase in which a Bi concentration is at least 1.2 times a mean Bi concentration in the dielectric composition as a whole.
2. The dielectric composition according to claim 1 , wherein 0<α≤0.150, where α is a surface area proportion of the high-Bi phase in a cross section of the dielectric composition, with respect to the whole of the cross section.
3. The dielectric composition according to claim 1 , wherein 0.125≤β≤2.000, where β is a molar ratio of Bi with respect to Sr in the dielectric composition.
4. The dielectric composition according to claim 1 , further comprising at least one element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Ba, Ca, Mg and Zn.
5. The dielectric composition according to claim 4 , wherein a content of the element is between 1 molar part and 24 molar parts, taking a Ti content of the dielectric composition as 100 molar parts.
6. The dielectric composition according to claim 1 , further comprising Li, wherein a Li content is between 0.1 molar parts and 14 molar parts, taking a Ti content of the dielectric composition as 100 molar parts.
7. A dielectric element comprising the dielectric composition according to claim 1 .
8. An electronic component comprising a dielectric layer comprising the dielectric composition according to claim 7 .
9. A laminated electronic component comprising:
a laminated portion formed by alternately laminating an internal electrode layer and a dielectric layer comprising the dielectric composition according claim 1 .
10. A single-plate capacitor comprising the dielectric composition according to claim 1 .
11. A laminated ceramic capacitor comprising:
a capacitor element main body having a structure in which dielectric layers comprising the dielectric composition according to claim 1 and internal electrode layers are alternately stacked; and
a pair of terminal electrodes located at both ends of the capacitor element main body and connected to exposed end surfaces of the internal electrode layers which are alternately disposed, thereby forming a capacitor circuit.
12. The laminated ceramic capacitor according to claim 11 , wherein a conductive material of the internal electrode layers comprises Cu.
13. The laminated ceramic capacitor according to claim 11 , wherein a conductive material of the internal electrode layers comprises a Cu alloy.
14. The laminated ceramic capacitor according to claim 11 , wherein a base metal is used as a conductive material for the internal electrode layers.
15. The laminated ceramic capacitor according to claim 11 , wherein the terminal electrodes comprise Cu.
16. The laminated ceramic capacitor according to claim 11 , wherein the terminal electrodes comprise a Cu alloy.
17. A method for producing a laminated ceramic capacitor, the method comprising:
preparing a green chip using a sheet method or a printing method employing a paste for dielectric layers and a paste for internal electrodes, wherein the paste for the dielectric layers is an organic paint comprising a mixture of a dielectric starting material and an organic vehicle or wherein the paste for the dielectric layers is an aqueous paint comprising a mixture of a dielectric starting material and an aqueous vehicle;
performing a debinding treatment on the green chip;
baking the green chip thereby forming a main body;
printing or transcribing external electrodes on the main body; and
baking the main body,
wherein the dielectric starting material is selected such that a baked dielectric composition has a perovskite crystal structure containing at least Bi, Na, Sr and Ti, and
wherein the dielectric composition includes a high-Bi phase in which a Bi concentration is at least 1.2 times a mean Bi concentration in the dielectric composition as a whole.
18. The method according to claim 17 , wherein a base metal alone or an alloy comprising a base metal is used for a conductive material of the internal electrodes.
19. The method according to claim 17 , wherein Cu is used for a conductive material of the internal electrodes.
20. The method according to claim 17 , wherein a Cu alloy is used for a conductive material of the internal electrodes.