Housing comprising a semiconductor body and a method for producing a housing with a semiconductor body
A method for producing a component having a semiconductor body includes providing the semiconductor body including a radiation passage surface and a rear side facing away from the radiation passage surface, wherein the semiconductor body comprises on the rear side a connection location for the electrical contacting of the semiconductor body, providing a composite carrier including a carrier layer and a partly cured connecting layer, applying the semiconductor body on the composite carrier, such that the connection location penetrates into the partly cured connecting layer, curing the connecting layer to form a solid composite, applying a molded body material on the composite carrier after curing the connecting layer, wherein the molded body covers side surfaces of the semiconductor body, forming a cutout through the carrier layer and the connecting layer in order to expose the connection location, and filling the cutout with an electrically conductive material.
1. A component comprising a semiconductor body and a housing,
wherein
the housing is formed from a continuous composite comprising:
a molded body,
a composite carrier arranged substantially flush with the molded body, wherein the composite carrier comprises a carrier layer and a cured electrically insulating connecting layer, wherein the electrically insulating connecting layer directly contacts a rear side of the semiconductor body,
an electrical connection location for electrical contacting of the semiconductor body on the rear side of the semiconductor body facing the carrier layer,
the electrical connection location is arranged in the electrically insulating connecting layer and is surrounded by the electrically insulating connecting layer fully circumferentially in lateral directions,
the molded body covers side surfaces of the semiconductor body, wherein in a plan view of the carrier layer the molded body surrounds the semiconductor body fully circumferentially and overlaps the composite carrier,
the semiconductor body comprises a radiation passage surface on a side of the semiconductor body opposite to the rear side of the semiconductor body;
wherein the molded body is absent from the radiation passage surface.
2. The component as claimed in claim 1 ,
wherein the semiconductor body comprises on the rear side two electrical connection locations, of which a first electrical connection location is electrically conductively connected to a first semiconductor layer of a first charge carrier type of the semiconductor body and a second electrical connection location is electrically conductively connected to a second semiconductor layer of a second charge carrier type of the semiconductor body, wherein the carrier layer is subdivided into two partial regions, which are spaced apart from one another laterally, and overlap the electrically insulating connecting layer in plan view and are electrically connected in each case to one of the two connection locations.
3. The component as claimed in claim 2 , wherein the two partial regions of the carrier layer each comprise a connection column.
4. The component as claimed in claim 3 , wherein an intermediate trench is formed between the two connection columns.
5. The component as claimed in claim 4 , wherein the intermediate trench exposes the electrically insulating connecting layer.
6. The component as claimed in claim 1 ,
wherein the molded body in plan view overlaps the electrically insulating connecting layer and is mechanically carried by the electrically insulating connecting layer.
7. The component as claimed in claim 1 ,
wherein the connection location is formed from copper or coated with copper and the carrier layer is formed from copper, wherein the electrical connection location and the carrier layer extend into the electrically insulating connecting layer in order to form an electrical contact.