Group III nitride semiconductor light-emitting element and method of manufacturing same
A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting element 100 comprises, in the following order: an n-type group III nitride semiconductor layer 30 ; a group III nitride semiconductor laminated body 40 obtained by alternately laminating a barrier layer 40 a and a well layer 40 b narrower in bandgap than the barrier layer 40 a in the stated order so that the number of barrier layers 40 a and the number of well layers 40 b are both N, where N is an integer; an AlN guide layer 60 ; and a p-type group III nitride semiconductor layer 70 , wherein the AlN guide layer 60 has a thickness of 0.5 nm or more and 2.0 nm or less.
1. A method of manufacturing a group III nitride semiconductor light-emitting element, the method comprising:
a first step of forming an n-type group III nitride semiconductor layer;
a second step of forming, on the n-type group III nitride semiconductor layer, a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer;
a third step of forming an AlN guide layer having a thickness of 0.5 nm or more and 2.0 nm or less, on the group III nitride semiconductor laminated body; and
a fourth step of forming a p-type group III nitride semiconductor layer on the AlN guide layer,
wherein, in the third step, (i) an AlGaN alteration layer is epitaxially grown using source gas including trimethylaluminum gas, trimethylgallium gas, and ammonia gas; (ii) supply of the trimethylaluminum gas and the trimethylgallium gas is then stopped to interrupt the epitaxial growth; and (iii) the AlGaN alteration layer is exposed to a carrier gas atmosphere having hydrogen as a main component, to at least partially remove and alter the AlGaN alteration layer to the AlN guide layer, and cause a remaining part of the AlGaN alteration layer to be a final barrier layer.
2. The method of manufacturing a group III nitride semiconductor light-emitting element according to claim 1 ,
wherein, in the third step, the whole AlGaN alteration layer is altered to the AlN guide layer.
3. The method of manufacturing a group III nitride semiconductor light-emitting element according to claim 1 ,
wherein the AlN guide layer is i-type.