Spin transfer torque memory (STTM), methods of forming the same using volatile compound forming elements, and devices including the same
Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for removing a re-deposited layer and/or interrupting the electrical continuity of a re-deposited layer that may form on one or more sidewalls of an STTM element during its formation. Devices and systems including such STTM elements are also described.
1. An integrated circuit device, comprising at least one spin transfer torque memory (STTM) element, wherein:
the STTM element comprises a substrate, a conductive layer on the substrate, and a material stack on the conductive layer, the material stack defining a magnetic tunnel junction (MTJ) including a fixed magnetic layer, a dielectric layer, and a free magnetic layer, the magnetic tunnel junction comprising at least one sidewall;
wherein said conductive layer comprises a conductive material that forms a volatile species when exposed to a reactant gas;
wherein said STTM element is a planar STTM element or a perpendicular STTM element;
wherein a re-deposited layer is present on at least one of said sidewalls, the re-deposited layer comprising components of at least one of said fixed magnetic layer, dielectric layer, said free magnetic layer, or a combination thereof; and a gap is present in the re-deposited layer, the gap disrupting the electrical continuity of the re-deposited layer;
wherein said gap is formed in a region of the re-deposited layer proximate said dielectric layer; and
wherein said dielectric layer has a thickness, and the gap spans the entire thickness of the dielectric layer.
2. The integrated circuit device of claim 1 , wherein said conductive material is selected from the group consisting of ruthenium, iridium, rhodium, carbon based conductive materials, or alloys or mixtures thereof.
3. The integrated circuit device of claim 2 , wherein said conductive material comprises ruthenium.
4. The integrated circuit device of claim 3 , wherein said conductive material is ruthenium.
5. The integrated circuit device of claim 1 , further comprising a groove in the substrate, wherein said conductive layer is formed in said groove.
6. The integrated circuit device of claim 1 , wherein a width of the conductive layer is greater than a width of said MTJ in at least one dimension.
7. The integrated circuit device of claim 1 , wherein said fixed magnetic layer comprises one or more layers of a cobalt, iron, boron (CoFeB) alloy.
8. The integrated circuit device of claim 1 , wherein said free magnetic layer comprise one or more layers of a cobalt, iron, boron (CoFeB) alloy.
9. The integrated circuit device of claim 1 , wherein said dielectric layer includes one more of magnesium oxide (MgO), aluminum oxide (Al 2 O 3 ), europium oxide (EuO), europium magnesium oxide (EuMgO), europium sulfide (EuS), europium selenide (EuSe), bismuth manganate (BiMnO 3 ), nickel iron oxide (NiFe 2 O 4 ), cobalt iron oxide (CoFe 2 O 4 ), gallium arsenide (GaAs), europium oxide (EuO), strontium titanate (SrTiO 3 ), magnesium aluminum oxide (MgAlO), or a combination thereof.