IP Library Granted Patent US 10,641,807
Granted Patent B2
US 10,641,807 · App. 15/753,585 · Granted May 5, 2020

Optical modulator and electric field sensor

Inventors: Mitsuru Shinagawa (Tokyo, JP); Toshiaki Asahi (Tokyo, JP)
Assignees: JX NIPPON MINING & METALS CORPORATION; Mitsuru Shinagawa
G01R29/0885G01R1/071G01R15/242G02B27/0977H01L31/02327H01S3/0064
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Quick Facts
Patent No.
US 10,641,807
App. No.
15/753,585
Granted
May 5, 2020
Kind
B2
Abstract

In an optical modulator capable of modulating incident laser beam L by a compound semiconductor single crystal having a property of generating an electro-optic effect, the attenuation of the signal strength in a low frequency band is prevented without lowering the carrier concentration of the compound semiconductor. The optical modulator 23 comprises: incidence limiting means 25 which is provided on or near an incidence plane 24 a , on which the laser beam L can be incident, of the compound semiconductor single crystal 24 so as to limit incidence of light other than the laser beam L on the incidence plane 24 a ; and a shielding member 26 which is formed from a low-permittivity material having a light blocking effect, and covers a surface 24 c of the compound semiconductor single crystal 24 extending along a traveling direction of the laser beam L that entered the compound semiconductor single crystal 24.

Claims (24)

1. An optical modulator capable of modulating incident laser beam by a compound semiconductor single crystal having a property of generating an electro-optic effect, the optical modulator comprising:

incidence limiting means which is provided on or near an incidence plane, on which the laser beam can be incident, of the compound semiconductor single crystal so as to limit incidence of light other than the laser beam on the incidence plane; and

a shielding member which is formed from a low-permittivity material having a light blocking effect, and covers a surface of the compound semiconductor single crystal that extends along a traveling direction of the laser beam that entered the compound semiconductor single crystal;

wherein the incidence limiting means is configured such that the shielding member extends beyond the incidence plane in a direction from which the laser beam enters.

2. The optical modulator according to claim 1 , wherein the incidence limiting means is a dichroic mirror which is configured to permit the passage of only light of the same wavelength as the laser beam, and is attached to the incidence plane.

3. The optical modulator according to claim 1 , wherein the incidence limiting means is a shielding plate in which a pinhole penetrating in a thickness direction and having a diameter substantially equal to a width of the laser beam is formed, and which is attached to the incidence plane.

4. The optical modulator according to claim 1 , wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.

5. An electric field sensor, comprising:

the optical modulator according to claim 1 ;

a light source to cause a laser beam to be incident on the incidence plane; and

conversion means to convert changes in polarization of the laser beam that passed through the optical modulator, into an electric signal.

6. The electric field sensor according to claim 5 , wherein the incidence limiting means of the optical modulator is a dichroic mirror which is configured to permit the passage of only light of the same wavelength as the laser beam, and is attached to the incidence plane.

7. The electric field sensor according to claim 5 , wherein the incidence limiting means of the optical modulator is a shielding plate in which a pinhole penetrating in a thickness direction and having a diameter substantially equal to a width of the laser beam is formed, and which is attached to the incidence plane.

8. The electric field sensor according to claim 6 , wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.

9. The electric field sensor according to claim 7 , wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.

10. The optical modulator according to claim 3 , wherein an antireflection film which prevents the laser beam from reflecting off the incidence plane is formed between the incidence plane and the incidence limiting means.

11. An optical modulator capable of modulating incident laser beam by a compound semiconductor single crystal having a property of generating an electro-optic effect, the optical modulator comprising:

incidence limiting means which is provided on or near an incidence plane, on which the laser beam can be incident, of the compound semiconductor single crystal so as to limit incidence of light other than the laser beam on the incidence plane, the incidence limiting means being a shielding plate in which a pinhole penetrating in a thickness direction and having a diameter substantially equal to a width of the laser beam is formed, and which is attached to the incidence plane;

an antireflection film which prevents the laser beam from reflecting off the incidence plane being formed between the incidence plane and the incidence limiting means; and

a shielding member which is formed from a low-permittivity material having a light blocking effect, and covers a surface of the compound semiconductor single crystal that extends along a traveling direction of the laser beam that entered the compound semiconductor single crystal.

12. An electric field sensor, comprising:

the optical modulator according to claim 11 ;

a light source to cause a laser beam to be incident on the incidence plane; and

conversion means to convert changes in polarization of the laser beam that passed through the optical modulator, into an electric signal.

Assignments (2)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2018
From: ASAHI, TOSHIAKI
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 044972/0787 →