High retention resistive random access memory

1. A resistive memory comprising:

a top electrode and a bottom electrode;

an oxygen exchange layer (OEL) between the top and bottom electrodes;

a first oxide layer between the OEL and the bottom electrode; and

a second oxide layer between the first oxide layer and the bottom electrode;

wherein (a) a first plurality of oxygen vacancies are within the first oxide layer and are adjacent the OEL at a first concentration, (b) a second plurality of oxygen vacancies are within the first oxide layer and are adjacent the second oxide layer at a second concentration that is less than the first concentration, (c) the first oxide layer includes a first oxide material different from a second oxide material included in the second oxide layer, and (d) the OEL includes a metal;

wherein (a) the second oxide layer directly contacts the first oxide layer; (b) the first oxide layer directly contacts the OEL; (c) the metal includes at least one of Hafnium (Hf), Titanium (Ti), Tantalum (Ta), Erbium (Er), Gadolinium (Gd) or combinations thereof; and (d) the first oxide material includes at least one of HfO x , SiOX, Al 2 O x , TiO x , TaO x , GdO x , ErO x , NbO x , WO x , ZnO x , InGaZnO x , or combinations thereof, and (e) the second oxide material includes a doped instance of the first oxide material, the doped instance of the first oxide material including at least one of HfSiO x , HfAlO x , MgO x , LaAlO x , LaSiO x , GdSiO x , or combinations thereof.

2. The memory of claim 1 , wherein the memory is a resistive random access memory (RRAM).

3. The memory of claim 1 , wherein the top electrode includes at least one of TiN, TaN, W, Ru, Ir, TiAlN, TaAlN or combinations thereof while the bottom electrode includes at least one of W, Pd, Pt, Ru, Mo, TiN, or combinations thereof.

4. The memory of claim 1 , wherein the first plurality of oxygen vacancies are immediately adjacent the OEL and the second plurality of oxygen vacancies are immediately adjacent the second oxide layer.

5. The memory of claim 1 , wherein:

in a first state when energy is applied to the top electrode at a first polarity the first and second pluralities of oxygen vacancies form a first filament having a first electrical resistance; and

in a second state when energy is applied to the top electrode at a second polarity, which is opposite the first polarity, the first and second pluralities of oxygen vacancies form a second filament having a second electrical resistance that is greater than the first electrical resistance.

6. The memory of claim 5 , wherein in the second state the second plurality of oxygen vacancies is at the second concentration and in the first state the second plurality of oxygen vacancies is at an additional concentration that is greater than the second concentration.

7. The memory of claim 1 , wherein:

in a first state when energy is applied to the top electrode at a first polarity the first and second pluralities of oxygen vacancies form a first filament having a first electrical resistance; and

in a second state when energy is applied to the top electrode at a second polarity, which is opposite the first polarity, the first and second pluralities of oxygen vacancies form a path between the top and bottom electrodes having a second electrical resistance that is greater than the first electrical resistance.

8. A system comprising:

a processor;

the memory, coupled to the processor, according to claim 1 ; and

a communication module, coupled to the processor, to communicate with a computing node external to the system.