OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT
An optoelectronic component includes a semiconductor chip, the semiconductor chip emitting infrared radiation; a reflector that reflects the infrared radiation of the semiconductor chip; and a filter configured in the form of a coating, the filter being transparent for the infrared radiation of the semiconductor chip, wherein visible light striking the optoelectronic component being absorbed to at least 75 %.
1 - 13 . (canceled)
14 . An optoelectronic component comprising:
a semiconductor chip, the semiconductor chip emitting infrared radiation;
a reflector that reflects the infrared radiation of the semiconductor chip; and
a filter configured in the form of a coating, the filter being transparent for the infrared radiation of the semiconductor chip,
wherein visible light striking the optoelectronic component being absorbed to at least 75%.
15 . The optoelectronic component as claimed in claim 14 , wherein the thickness of the filter is at most 50 μm.
16 . The optoelectronic component as claimed in claim 14 , wherein at least 90% of the infrared radiation emitted by the semiconductor chip passes through the filter.
17 . The optoelectronic component as claimed in claim 14 , wherein the filter comprises a matrix material with colorant.
18 . The optoelectronic component as claimed in claim 17 , wherein the matrix material comprises an epoxy resin, silicone, plastic or lacquer.
19 . The optoelectronic component as claimed in claim 14 , wherein the reflector is coated with silver or aluminum.
20 . The optoelectronic component as claimed in claim 14 , wherein the reflector is coated with gold.
21 . The optoelectronic component as claimed in claim 20 , wherein a combined system consisting of the filter and the gold coating of the reflector absorbs visible light striking the optoelectronic component to at least 75%.
22 . The optoelectronic component as claimed in claim 14 , wherein the semiconductor chip is covered with the filter.
23 . The optoelectronic component as claimed in claim 22 , wherein the reflector is coated with gold, and the filter absorbs visible light to at least 75%.
24 . A method of producing an optoelectronic component comprising:
placing an optoelectronic semiconductor chip on a carrier,
electrically contacting the semiconductor chip,
placing a reflector on the carrier, and
applying a filter by applying a coating.
25 . The method as claimed in claim 24 , wherein the filter is applied after placement and contacting of the semiconductor chip.
26 . The method as claimed in claim 24 , wherein the filter is applied before placement and contacting of the semiconductor chip.