Light-emitting component and method for producing a light-emitting component

1. A component comprising at least one optoelectronic semiconductor chip having

a connection substrate comprising a mounting surface and electrical contact structures and

a plurality of structured semiconductor units, each comprising a plurality of monolithically integrated image points each having an active layer which emits light during operation, wherein

the semiconductor units are arranged on the mounting surface at a distance from one another laterally and

the image points are separately electrically controllable, wherein

each image point is electrically connected to at least one semiconductor contact,

each image point is associated with a respective electrical contact structure, and

the electrical contact structure associated with an image point can be electrically connected to the semiconductor contact of the respective image point.

2. The component according to claim 1 ,

in which a distance (d) between adjacent semiconductor units is at least 5 μm and no more than 55 μm.

3. The component according to claim 1 , in which

the active layers of the image points are in a monolithically integrated form and

the image points are separately electrically controllable by means of multiple semiconductor contacts which are at a distance from one another laterally, wherein

a distance (a) between adjacent semiconductor contacts is at least 1 μm and no more than 25 μm.

4. The component according to claim 1 ,

in which, between the active layers of adjacent image points, a separation trench having a width (B) of at least 5 μm and no more than 25 μm is arranged in each case.

5. The component according to claim 4 ,

in which the image points are optically separate from one another.

6. The component according to claim 1 ,

in which at least two of the semiconductor units comprise different numbers of image points.

7. The component according to claim 1 ,

in which the connection substrate comprises at least one integrated circuit.

8. The component according to claim 1 ,

in which the connection substrate contains a plurality of current sources, wherein each of the current sources is uniquely associated with one of the image points and is electrically connected to this image point.

9. The component according to claim 1 ,

in which the distance between adjacent semiconductor units deviates by no more than +/−10% from an average width of the separation trenches.

10. The component according to claim 1 ,

in which the distances between adjacent semiconductor units deviate by no more than +/−10% from an average distance (a) between adjacent semiconductor units.

11. The component according to claim 1 ,

in which a light-emitting surface area of the component is at least 8 mm 2 , preferably at least 40 mm 2 .

12. The component according to claim 1 ,

in which a total number of image points of the component is at least 128, preferably at least 2500, and/or a luminous flux of the light emitted by the total number of the image points is at least 1600 lumen, preferably at least 6400 lumen.

13. The component according to claim 1 ,

comprising at least two optoelectronic semiconductor chips, which are arranged on a printed circuit board.

14. A method for producing a component, comprising the following method steps:

preparing a plurality of semiconductor units, each comprising a plurality of monolithically produced image points each having an active layer which emits light during operation, wherein each semiconductor unit is applied on a growth substrate in each case;

preparing a connection substrate having a mounting surface and electrical contact structures,

applying the semiconductor units on the mounting surface in such a way that the semiconductor units are arranged on the mounting surface at a distance from one another laterally, wherein

a distance (d) between adjacent semiconductor units is at least 5 μm and no more than 55 μm and

the image points are separately electrically controllable, wherein

each image point is electrically connected to at least one semiconductor contact,

each image point is associated with a respective electrical contact structure, and

the electrical contact structure associated with an image point can be electrically connected to the semiconductor contact of the respective image point; and

at least partly detaching the growth substrate.

15. The method according to claim 14 ,

wherein the semiconductor units are prepared by means of singulation from a wafer composite having a plurality of image points.

16. The method according to claim 15 ,

wherein the preparation of the semiconductor units furthermore comprises the following method steps:

detecting semiconductor units having defective image points,

separating out the semiconductor units having defective image points in such a way that, within the limits of manufacturing tolerances, exclusively semiconductor units having intact image points are applied on the mounting surface.

17. The method according to claim 14 , wherein

between the active layers of adjacent image points, a separation trench having a width (B) of at least 5 μm and no more than 25 μm is arranged in each case, and wherein

the distance between adjacent semiconductor units deviates by no more than +/−10% from an average width of the separation trenches.

18. A component comprising at least one optoelectronic semiconductor chip having

a connection substrate comprising a mounting surface and electrical contact structures and

a plurality of structured semiconductor units, each comprising a plurality of monolithically integrated image points each having an active layer which emits light during operation, wherein

the semiconductor units are arranged on the mounting surface at a distance from one another laterally,

the image points are separately electrically controllable, wherein

each image point is electrically connected to at least one semiconductor contact,

each image point is associated with a respective electrical contact structure; and

the electrical contact structure associated with an image point can be electrically connected to the semiconductor contact of the respective image point,

between the active layers of adjacent image points, a separation trench having a width (B) of at least 5 μm and no more than 25 μm is arranged in each case, and

the distance between adjacent semiconductor units deviates by no more than +/−10% from an average width of the separation trenches.