Bonding junction structure
Provided is a bonding joining structure in which a heat generating body and a support including a metal are joined to each other via a joint portion composed of a sintered body of copper powder. The support contains copper or gold, the copper or gold being present in at least an outermost surface of the support. An interdiffusion portion in which copper or gold contained in the support and copper contained in the sintered body is formed so as to straddle a bonding interface between the support and the sintered body. Preferably, a copper crystal structure having the same crystal orientation is formed in the interdiffusion portion so as to straddle the bonding interface.
1. A bonding joining structure in which a heat generating body and a support comprising a metal are joined to each other via a joint portion composed of a sintered body of copper powder,
wherein the support contains copper or gold, the copper or gold being present in at least an outermost surface of the support, and
an interdiffusion portion in which copper or gold contained in the support and copper contained in the sintered body are diffused to each other is formed so as to straddle a bonding interface between the support and the sintered body.
2. The bonding joining structure according to claim 1 ,
wherein the bonding joining structure is a die bonding joining structure in which a die of a semiconductor device, the die serving as the heat generating body, and the support comprising a metal are joined to each other via the joint portion composed of the sintered body of the copper powder,
the support contains copper or gold, the copper or gold being present in at least the outermost surface of the support, and
the interdiffusion portion in which copper or gold contained in the support and copper contained in the sintered body are diffused to each other is formed so as to straddle the bonding interface between the support and the sintered body.
3. The bonding joining structure according to claim 2 ,
wherein copper is present in the outermost surface of the support, and
a copper crystal structure having the same crystal orientation is formed in the interdiffusion portion so as to straddle the bonding interface.
4. The bonding joining structure according to claim 3 ,
wherein the copper crystal structure having the same crystal orientation has a traverse length of 10 nm or more at the bonding interface.
5. The bonding joining structure according to claim 3 ,
wherein a gold layer is formed on a bottom surface of the die,
the interdiffusion portion in which gold contained in the bottom surface of the die and copper contained in the sintered body are diffused to each other is formed so as to straddle a bonding interface between the die and the sintered body, and
the interdiffusion portion contains Cu 3 Au.
6. The bonding joining structure according to claim 5 ,
wherein the interdiffusion portion contains Cu 3 Au and a solid solution of gold and copper.
7. The bonding joining structure according to claim 4 ,
wherein a gold layer is formed on a bottom surface of the die,
the interdiffusion portion in which gold contained in the bottom surface of the die and copper contained in the sintered body are diffused to each other is formed so as to straddle a bonding interface between the die and the sintered body, and
the interdiffusion portion contains Cu 3 Au.
8. The bonding joining structure according to claim 7 ,
wherein the interdiffusion portion contains Cu 3 Au and a solid solution of gold and copper.
9. The bonding joining structure according to claim 2 ,
wherein gold is present in the outermost surface of the support, and the interdiffusion portion contains Cu 3 Au.
10. The bonding joining structure according to claim 9 ,
wherein the interdiffusion portion contains Cu 3 Au and a solid solution of gold and copper.
11. The bonding joining structure according to claim 9 ,
wherein a gold layer is formed on a bottom surface of the die,
the interdiffusion portion in which gold contained in the bottom surface of the die and copper contained in the sintered body are diffused to each other is formed so as to straddle a bonding interface between the die and the sintered body, and
the interdiffusion portion contains Cu 3 Au.
12. The bonding joining structure according to claim 11 ,
wherein the interdiffusion portion contains Cu 3 Au and a solid solution of gold and copper.
13. The bonding joining structure according to claim 2 ,
wherein a gold layer is formed on a bottom surface of the die,
the interdiffusion portion in which gold contained in the bottom surface of the die and copper contained in the sintered body are diffused to each other is formed so as to straddle a bonding interface between the die and the sintered body, and
the interdiffusion portion contains Cu 3 Au.
14. The bonding joining structure according to claim 13 ,
wherein the interdiffusion portion contains Cu 3 Au and a solid solution of gold and copper.
15. A bonding joining structure in which a heat generating body and support comprising a metal are joined to each other via a joint portion composed of a sintered body of nickel powder,
wherein the support contains nickel, the nickel being present in at least an outermost surface of the support, and
an interdiffusion portion in which nickel contained in the support and nickel contained in the sintered body are diffused to each other is formed so as to straddle a bonding interface between the support and the sintered body.
16. A bonding joining structure in which a heat generating body and a support comprising a metal are joined to each other via a joint portion composed of a sintered body of silver powder,
wherein the support contains silver, the silver being present in at least an outermost surface of the support, and
an interdiffusion portion in which silver contained in the support and silver contained in the sintered body are diffused to each other is formed so as to straddle a bonding interface between the support and the sintered body.