Optoelectronic component and background lighting for a display

1. An optoelectronic component comprising

a semiconductor chip for generating a primary radiation in the blue spectral range,

a conversion element which is arranged in a beam path of the semiconductor chip and is designed to generate secondary radiation from the primary radiation,

wherein the conversion element comprises at least one first phosphor and a second phosphor, wherein the first phosphor is Sr(Sr 1−x Ca x )Si 2 Al 2 N 6 :Eu 2+ and/or (Sr 1−y Ca y )[LiAl 3 N 4 ]:Eu 2+ with 0≤x≤1 and 0≤y≤1,

a reflection element,

wherein a total radiation (G) exiting from the component is white mixed light,

wherein the conversion element is formed as a layer system comprising at least two layers,

wherein the first layer comprises the first phosphor and the second layer comprises the second phosphor,

wherein the first layer is arranged between the semiconductor chip and the second layer, or wherein the second layer is arranged between the semiconductor chip and the first layer, and

wherein the reflection element directly surrounds both the side surfaces of the semiconductor chip and the side surfaces of the conversion element.

2. The optoelectronic component according to claim 1 , wherein the first phosphor is Sr(Sr 1−x Ca x )Si 2 Al 2 N 6 :Eu 2+ having a colour locus Cx between 0.655 and 0.685 and Cy between 0.300 and 0.350 and/or wherein the emission spectrum of the first phosphor Sr(Sr 1−x Ca x )Si 2 Al 2 N 6 :Eu 2+ has a maximum full width at half maximum of 82 nm.

3. The optoelectronic component according to claim 1 , wherein the first phosphor (Sr 1−y Ca y )[LiAl 3 N 4 ]:Eu 2+ has a color locus Cx between 0.680 and 0.715 and Cy between 0.280 and 0.320, and/or wherein the emission spectrum of the first phosphor (Sr 1−y Ca y )[LiAl 3 N 4 ]:Eu 2+ has a maximum full width at half maximum of 55 nm.

4. The optoelectronic component according to claim 1 ,

wherein an emitted radiation of the first phosphor has a dominance wavelength in the range of 590 nm to 640 nm.

5. The optoelectronic component according to claim 1 ,

wherein the conversion element has a second phosphor selected from the group consisting of (Ba, Sr) 2 SiO 4 , beta-SiAlON, (Y,Lu) 3 (Al,Ga) 5 O 12 and Ba—SiON, wherein the second phosphor is doped with rare earths and is designed for emitting radiation having a peak wavelength in the spectral range between 510 nm and 590 nm.

6. The optoelectronic component according to claim 1 ,

wherein the second phosphor is a beta-SiAlON.

7. The optoelectronic component according to claim 1 ,

wherein the first phosphor and the second phosphor are dispersed in a matrix material and are arranged directly downstream of a radiation exit area of the semiconductor chip.

8. The optoelectronic component according to claim 1 ,

which has a further semiconductor chip, which is designed to generate a further primary radiation in the blue spectral range, wherein the semiconductor chips are arranged in a common recess, wherein the conversion element is formed as a potting and surrounds both semiconductor chips in a form-fitting manner.

9. The optoelectronic component according to claim 1 ,

wherein the blue spectral range has a peak wavelength maximum between 380 nm and 480 nm.

10. A background lighting for a display, which comprises at least one optoelectronic component according to claim 1 .

11. A method for producing an optoelectronic component according to claim 1 , comprising the following steps:

A) Provision of a semiconductor chip for generating a primary radiation in the blue spectral range,

B) Provision of a conversion element which is arranged in the beam path of the semiconductor chip and is designed to generate secondary radiation from the primary radiation, wherein the conversion element has at least one first and second phosphor,

wherein the first phosphor is Sr(Sr 1−x Ca x )Si 2 Al 2 N 6 :Eu 2+ and/or (Sr 1−y Ca y )[LiAl 3 N 4 ]:Eu 2+ where 0≤x≤1 and 0≤y≤1, wherein the component emits white mixed light at least during operation.

12. The optoelectronic component according to claim 1 ,

wherein the conversion element is arranged directly on the radiation exit area of the semiconductor chip.

13. The optoelectronic component according to claim 1 ,

wherein an adhesive layer is arranged between the semiconductor chip and the conversion element.

14. The optoelectronic component according to claim 1 ,

wherein the first layer and the second layer are spatially separated from one another by a further adhesive layer.

15. The optoelectronic component according to claim 1 ,

wherein the first layer consists of the first phosphor.

16. The optoelectronic component according to claim 1 ,

wherein the second layer consists of the second phosphor.