Demodulation pixel devices, arrays of pixel devices and optoelectronic devices incorporating the same

1. A pixel device operable to demodulate incident modulated light, the pixel device comprising:

a pinned photodiode structure including a substrate of a first type, an implant layer of a second type, an implant layer of the first type disposed within the implant layer of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region, operable such that modulated light and common mode light incident on the photo-detection region generate charge-carriers of the second type, the charge-carriers having modulation characteristics of the incident modulated light;

a plurality of first transfer gates and a plurality of second transfer gates disposed on a surface of the insulator wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to generate a field within the substrate of the first type; and

a plurality of first floating diffusion implant layers of the second type and a plurality of second floating diffusion implant layers of the second type disposed within the substrate of the first type;

wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of first floating diffusion implant layers at a first instance in time, and the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of second floating diffusion implant layers at a second instance in time, and

wherein the pixel device further comprises an auxiliary implant layer of the second type disposed within the implant layer of the second type.

2. The pixel device as in claim 1 , further comprising at least one auxiliary transfer gate and at least one auxiliary floating diffusion implant layer of the second type.

3. The pixel device as in claim 2 , wherein the first, second, and auxiliary transfer gates are operable to conduct charge-carriers generated by the common mode light to the auxiliary floating diffusion implant layer of the second type.

4. The pixel device according to claim 3 , further comprising a plurality of auxiliary transfer gates and a plurality of auxiliary floating diffusion implant layers of the second type wherein the first transfer gates, second transfer gates, and the plurality of auxiliary transfer gates are operable to conduct charge-carriers generated by the common mode light to the plurality of auxiliary floating diffusion implant layers of the second type.

5. The pixel device of claim 4 , wherein at least one of the plurality of first floating diffusion implant layers of the second type disposed within the substrate of the first type is shared with another pixel device,

wherein at least one of the plurality of second floating diffusion implant layers of the second type disposed within the substrate of the first type is shared with another pixel device,

optionally wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are hexagonally disposed around the photo-detection region, and

optionally wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are octagonally disposed around the photo-detection region.

6. The pixel device as in claim 2 , wherein the plurality of first transfer gates, the plurality of second transfer gates, and the at least one auxiliary transfer gate are operable to conduct the charge-carriers to the plurality of first floating diffusion implant layers, the plurality of second floating diffusion implant layers, or the at least one auxiliary floating diffusion implant layer at a third instance in time.

7. The pixel device as in claim 6 , wherein the plurality of first transfer gates, the plurality of second transfer gates, and the at least one auxiliary transfer gate are operable to conduct the charge-carriers to the plurality of first floating diffusion implant layers, the plurality of second floating diffusion implant layers, or the at least one auxiliary floating diffusion implant layer at a fourth instance in time.

8. The pixel device as in claim 1 , wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are circumferentially disposed around the photo-detection region such that the charge-carrier transport paths to the floating diffusion implant layers are minimized.

9. The pixel device as in claim 8 , wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are hexagonally disposed around the photo-detection region.

10. The pixel device as in claim 8 , wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are octagonally disposed around the photo-detection region.

11. The pixel device as in claim 8 , wherein each first transfer gate within the plurality of first transfer gates are disposed at opposing sides of the photo-detection region, and each second transfer gate within the plurality of second transfer gates are disposed at opposing sides of the photo-detection region.

12. The pixel device as claim 1 , wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of first floating diffusion implant layers or the plurality of second floating diffusion implant layers at a third instance in time.

13. The pixel device as claim 12 , wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of first floating diffusion implant layers or the plurality of second floating diffusion implant layers at a fourth instance in time.

14. The pixel device as in claim 1 , wherein holes are the majority charge-carriers within components of the first type, and electrons are the majority charge-carriers within components of the second type.

15. The pixel device as in claim 1 , wherein electrons are the majority charge-carriers within components of the first type, and holes are the majority charge-carriers within components of the second type.

16. A pixel device of claim 5 , operable to demodulate incident modulated light, the pixel device comprising:

a pinned photodiode structure including a substrate of a first type, an implant layer of a second type, an implant layer of the first type disposed within the implant layer of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region, operable such that modulated light and common mode light incident on the photo-detection region generate charge-carriers of the second type, the charge-carriers having modulation characteristics of the incident modulated light;

a plurality of first transfer gates and a plurality of second transfer gates disposed on a surface of the insulator, wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to generate a field within the substrate of the first type; and

a plurality of first floating diffusion implant layers of the second type and a plurality of second floating diffusion implant layers of the second type disposed within the substrate of the first type;

wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of first floating diffusion implant layers at a first instance in time, and the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of second floating diffusion implant layers at a second instance in time;

wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are circumferentially disposed around the photo-detection region such that the charge-carrier transport paths to the floating diffusion implant layers are minimized; and

wherein at least one of the plurality of second floating diffusion implant layers of the second type disposed within the substrate of the first type is shared with another pixel device.

17. The pixel device of claim 16 , wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are octagonally disposed around the photo-detection region.

18. The pixel device of claim 16 , wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are hexagonally disposed around the photo-detection region.

19. A pixel device operable to demodulate incident modulated light, the pixel device comprising:

a pinned photodiode structure including a substrate of a first type, an implant layer of a second type, an implant layer of the first type disposed within the implant layer of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region, operable such that modulated light and common mode light incident on the photo-detection region generate charge-carriers of the second type, the charge-carriers having modulation characteristics of the incident modulated light;

a plurality of first transfer gates and a plurality of second transfer gates disposed on a surface of the insulator, wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to generate a field within the substrate of the first type; and

a plurality of first floating diffusion implant layers of the second type and a plurality of second floating diffusion implant layers of the second type disposed within the substrate of the first type;

wherein the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of first floating diffusion implant layers at a first instance in time, and the plurality of first transfer gates and the plurality of second transfer gates are operable to conduct the charge-carriers to the plurality of second floating diffusion implant layers at a second instance in time; and

wherein the plurality of first transfer gates, the plurality of second transfer gates, the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are hexagonally disposed around the photo-detection region or octagonally disposed around the photo-detection region.

20. The pixel device of claim 19 , wherein at least one of the plurality of second floating diffusion implant layers of the second type disposed within the substrate of the first type is shared with another pixel device.