Image sensing device having a junction capacity expansion structure

1. An imaging device, comprising:

a first pixel disposed in a substrate, the first pixel including:

a first material disposed in the substrate; and

a second material disposed in the substrate,

wherein a first region of the first material, a second region of the first material, and a third region of the second material form at least one junction,

wherein a first lateral cross section of the substrate intersects the at least one junction,

wherein a second lateral cross section of the substrate intersects at least one fourth region of the first material,

wherein the first lateral cross section is taken closer to a light incident side of the substrate than the second lateral cross section,

wherein the at least one fourth region includes a first sub-region and a second sub-region,

wherein the first sub-region has a first impurity concentration lower than a second impurity concentration of the second sub-region,

wherein the first sub-region is closer to the light incident side of the substrate than the second sub-region,

wherein the second lateral cross section intersects the first sub-region or the second sub-region,

wherein the first sub-region and the second sub-region extend in a first direction along entire widths of the first region, the second region, and the third region measured in the first direction,

wherein the first sub-region and the second sub-region are stacked in a second direction perpendicular to the first direction,

wherein a fifth region of the second material contacts sidewalls of the first sub-region and the second sub-region, and

wherein a sixth region of the second material contacts a surface of the second sub-region that is furthest from the light incident side of the substrate.

2. The imaging device of claim 1 , wherein the at least one fourth region of the first material occupies a greater amount of surface area in the second lateral cross section than the first region of the first material and the second region of the first material occupy in the first lateral cross section.

3. The imaging device of claim 1 , further comprising:

an electrode on the substrate to read out electric charge.

4. The imaging device of claim 1 , wherein the first material is an n-type material, and the second material is a p-type material.

5. The imaging device of claim 1 , wherein the first material and the second material form a lattice structure in the first lateral cross section.

6. The imaging device of claim 5 , wherein portions of the first material form a grid of n columns and m rows in the second material such that, in the first lateral cross section, the second material surrounds four sides of each portion of the first material.

7. The imaging device of claim 5 , wherein portions the second material form a grid of n columns and m rows in the first material such that, in the first lateral cross section, the first material surrounds four sides of each portion of the second material.

8. The imaging device of claim 1 , wherein portions of the first material and portions of the second material form a checkered pattern in the first lateral cross section such that a 2×2 array of the portions of the first material and the portions of the second material include two directly diagonal adjacent portions of the first material and two directly diagonal adjacent portions of the second material.

9. The imaging device of claim 1 , wherein the first material and the second material have linear shapes in the first lateral cross section wherein the linear shapes are rectangles, wherein long sides of each rectangle are in parallel with long sides of a readout electrode or the long sides of each rectangle are orthogonal to the long sides of the readout electrode.

10. The imaging device of claim 1 , further comprising:

a charge accumulation region disposed in the substrate.

11. The imaging device of claim 10 , wherein the at least one fourth region of the first material occupies a greater amount of surface area in the second lateral cross section than the first region of the first material and the second region of the first material occupy in the first lateral cross section.

12. The imaging device of claim 10 , further comprising:

a second pixel,

wherein the first pixel and the second pixel share the charge accumulation region.

13. The imaging device of claim 12 , further comprising:

a first electrode on the substrate of the first pixel; and

a second electrode on the substrate of the second pixel, wherein the first electrode and the second electrode readout electric charge from the charge accumulation region.

14. The imaging device of claim 13 , wherein the first pixel and the second pixel are adjacent to one another and the charge accumulation region is between the first electrode and the second electrode.

15. The imaging device of claim 10 , further comprising:

a second pixel, a third pixel, and a fourth pixel,

wherein the first pixel, the second pixel, the third pixel, and the fourth pixel share the charge accumulation region.

16. The imaging device of claim 15 , further comprising:

a first electrode on the substrate of the first pixel;

a second electrode on a substrate of the second pixel;

a third electrode on a substrate of the third pixel; and

a fourth electrode on a substrate of the fourth pixel, wherein the first electrode, the second electrode, the third electrode, and the fourth electrode readout electric charge from the charge accumulation region.

17. The imaging device of claim 16 , wherein the first pixel, the second pixel, the third pixel and the fourth pixel are in a 2×2 matrix, and the charge accumulation region is at a center portion of the 2×2 matrix.

18. The imaging device of claim 17 , wherein the charge accumulation region is surrounded by the first electrode, the second electrode, the third electrode and the fourth electrode.

19. The imaging device of claim 1 , wherein a seventh region of the second material contacts the first region, the second region, and the third region on the light incident side of the substrate.