Naturally closed MEMs switch for ESD protection
The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.
1. A MEMS device, comprising:
a substrate having an anchor electrode and an RF electrode disposed therein;
a switching element comprising a stress layer, a bottom layer and a top layer, wherein the bottom layer is coupled to the top layer by a via at a first end of the switching element that is closest to the RF electrode and the bottom layer is coupled to the anchor electrode at a second end of the switching element and wherein the stress layer is under tensile stress and wherein the stress layer is in contact with a bottom surface of the bottom layer; and
an insulating layer disposed over the switching element, wherein the top layer is coupled to and in contact with the insulating layer at the second end.
2. The MEMS device of claim 1 , further comprising an anchor contact disposed between the anchor electrode and the bottom layer.
3. The MEMS device of claim 1 , further comprising an RF contact disposed on the RF electrode, wherein the stress layer moves from a position in contact with the RF contact and a position spaced from the RF contact.
4. The MEMS device of claim 3 , further comprising an additional insulating layer disposed on a bottom surface of the stress layer, where the additional insulating layer has an opening at a location corresponding to the RF contact such that a portion of the stress layer is exposed to make contact with the RF contact.
5. The MEMS device of claim 1 , wherein the stress in the stress layer is more tensile than stress in the bottom layer.
6. The MEMS device of claim 1 , further comprising an additional insulating layer disposed on a bottom surface of the stress layer, where the additional insulating layer has an opening at a location corresponding to the RF electrode such that a portion of the stress layer is exposed.
7. A MEMS device, comprising:
a substrate having an anchor electrode and an RF electrode disposed therein; and
a switching element comprising a stress layer, a bottom layer and a top layer, wherein the bottom layer is coupled to the top layer at a first end of the bottom layer that is closest to the RF electrode and the bottom layer is coupled to the anchor electrode at a second end of the bottom layer and wherein the stress layer is under tensile stress and wherein the stress layer is in contact with a bottom surface of the bottom layer further comprising: a pull-up electrode disposed over the switching element; and an insulating layer disposed between the top layer and the pull-up electrode, wherein the top layer is coupled to and in contact with the insulating layer at a first location.
8. The MEMS device of claim 7 , wherein the top layer is spaced from the bottom layer at the first location.
9. The MEMS device of claim 8 , wherein the top layer is coupled to the bottom layer at a location adjacent the RF electrode.
10. The MEMS device of claim 9 , wherein the switching element is capable of moving a first distance away from the RF electrode by applying a first voltage to the pull-up electrode.
11. The MEMS device of claim 10 , wherein the switching element is capable of moving a second distance away from the RF electrode when applying a second voltage, wherein the second distance is greater than the first distance, and the second voltage is greater than the first voltage.
12. The MEMS device of claim 11 , wherein the top layer, when at the second distance, is in contact with the insulating layer.
13. The MEMS device of claim 12 , wherein the top layer remains in contact with the insulating layer, and the stress layer remains spaced from the RF electrode, when the second voltage is removed.
14. The MEMS device of claim 13 , wherein the stress layer returns to a position in contact with an RF contact when the first voltage is removed.
15. The MEMS device of claim 7 , wherein the top layer remains in contact with the insulating layer when the stress layer is in contact with an RF contact.