IP Library › Granted Patent US 10,934,624
Granted Patent B2
US 10,934,624 · App. 15/773,499 · Granted Mar 2, 2021

Laminated film

Inventors: Tetsuya Suzuki (Yokohama, JP); Yuya Futagami (Yokohama, JP); Akira Shirakura (Yokohama, JP); Kazuya Ono (Tokyo, JP)
Assignees: Tetra Laval Holdings & Finance S.A.; Keio University
C23C16/545C23C16/26C23C16/401C23C16/50
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Quick Facts
Patent No.
US 10,934,624
App. No.
15/773,499
Granted
Mar 2, 2021
Kind
B2
Abstract

The aim of the present invention lies in inexpensively providing a thin-film laminated film having excellent barrier properties. A further aim of the present invention lies in providing a method for producing a thin-film laminated film in which a plurality of thin films are coated on a plastic film by means of atmospheric-pressure plasma CVD which has low equipment costs and running costs, and also in providing a thin-film laminated film production apparatus which is able to operate continuously for a long period of time and can produce high-speed coating. A thin film according to the present invention includes a plastic film, a first silicon oxide-based thin film containing silicon oxide as the main component, and a first amorphous carbon-based thin film. The first amorphous carbon-based thin film is formed on the first silicon oxide-based thin film. The first silicon oxide-based thin film has pinholes with a diameter in the range of 10-200 nm.

Claims (14)

1. A thin-film laminated film comprising:

a plastic film;

a first amorphous carbon-based thin film formed on one surface of the plastic film;

a first silicon oxide-based thin film formed on one surface of the first amorphous carbon-based thin film; and

a second amorphous carbon-based thin film formed on one surface of the first silicon oxide-based thin film,

wherein the first silicon oxide-based thin film has pinholes formed by atmospheric-pressure plasma CVD such that the pinholes have diameters of between 10 nm and 200 nm.

2. The thin-film laminated film according to claim 1 , wherein a part of the second amorphous carbon-based thin film fits into the pinholes.

3. The thin-film laminated film according to claim 1 , wherein

a thickness of the first amorphous carbon-based thin film is between 10 nm and 150 nm at a location having no pinholes, and

a thickness of the first silicon oxide-based thin film is between 5 nm and 100 nm at a location having no pinholes.

4. The thin-film laminated film according to claim 1 , wherein the plastic film is at least one of a polyester-based film or a nylon film.

5. The thin-film laminated film according to claim 1 , wherein

the first amorphous carbon-based thin film and the second amorphous carbon-based thin film are formed by atmospheric-pressure plasma CVD, and

a part of the second amorphous carbon-based thin film that is formed by atmospheric-pressure plasma CVD fits into the pinholes of the first silicon oxide-based thin film that are formed by atmospheric-pressure plasma CVD.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2018
From: SUZUKI, TETSUYA; FUTAGAMI, YUYA; SHIRAKURA, AKIRA; ONO, KAZUYA
To: TETRA LAVAL HOLDINGS & FINANCE S.A.; KEIO UNIVERSITY
Reel/Frame 045741/0465 →
Priority Claims (1)
JP JP2015-217014 · Nov 4, 2015 · national
Continuity (1)
Related Publication 20180320268A1 · Nov 8, 2018
Cited By (1)
US 12,727,392