Single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor
A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board ( 10 ) comprises the following steps: drilling a hole on a substrate ( 11 ), the hole comprising a blind hole and/or a through hole (S 1 ); on a surface ( 12 ) of the substrate, forming a photoresist layer having a circuit negative image (S 2 ); forming a conductive seed layer on the surface ( 12 ) of the substrate and a hole wall ( 19 ) of the hole (S 3 ); removing the photoresist layer, and forming a circuit pattern on the surface ( 12 ) of the substrate (S 4 ), wherein Step S 3 comprises implanting a conductive material below the surface ( 12 ) of the substrate and below the hole wall ( 19 ) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.
1. A method for manufacturing single-layer circuit board, the method comprising:
drilling a hole on a substrate, the hole comprises a blind hole and/or a through hole;
on a surface of said substrate, forming a photoresist layer having a circuit negative image;
forming a conductive seed layer on the surface of said substrate and a hole wall of said hole; and
removing said photoresist layer, to form a circuit pattern on the surface of said substrate,
wherein forming a conductive seed layer comprises, implanting a conductive material below the surface of said substrate and below the hole wall of said hole via ion implantation, to form an ion implantation layer as at least part of said conductive seed layer.
2. The method of claim 1 , wherein forming the conductive seed layer further comprises, depositing a conductive material above said ion implantation layer via plasma deposition, to form plasma deposition layer, said plasma deposition layer and said ion implantation layer constitute said conductive seed layer, wherein during said plasma deposition, the ions of said conductive material gain energy of 1-1000 eV, form plasma deposition layer in a thickness of 1-10000 nm.
3. The method of claim 1 , wherein after forming the conductive seed layer and before removing said photoresist layer, said methods further comprises: via one or more of electroplating, chemical plating, vacuum evaporation, sputtering, utilizing one or more of Al, Mn, Fe, Ti, Cr, Co, Ni, Cu, Ag, Au, V, Zr, Mo, Nb and alloy thereof, forming a conductor thickening layer on said conductive seed layer.
4. The method of claim 1 , wherein during said ion implantation, the ions of said conductive material gain energy of 1-1000 keV, are implanted below the surface of said substrate and below the hole wall of said hole for a depth of 1-500 nm, and form a steady doping structure with said substrate.