Hybrid halide perovskite-based field effect transistors
In one aspect, field effect transistors are described herein employing channels formed of hybrid halide perovskite materials. For example, a field effect transistor comprises a source terminal, a drain terminal and a gate terminal wherein a dielectric layer is positioned between the gate terminal and the source and drain terminals. A channel layer is in electrical communication with the source terminal and the drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer.
1. A field effect transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals; and
a channel layer in electrical communication with the source terminal and drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer, wherein the polymeric surface of the dielectric layer comprises amorphous polymer.
2. The field effect transistor of claim 1 , wherein the organic-inorganic perovskite is an organic-inorganic halide perovskite.
3. The field effect transistor of claim 2 , wherein the organic-inorganic halide perovskite has a mixed halide composition.
4. The field effect transistor of claim 2 , wherein the organic-inorganic halide perovskite is of formula ABX 1-z Y z , wherein A is an organic cation, B is an element selected from the group consisting of transition metals, Group IVA elements and rare earth elements and X and Y are independently selected from Group VIIA elements, wherein 0≤z<1.
5. The field effect transistor of claim 4 , wherein the organic-inorganic halide perovskite is of formula APbI 1-z Cl z .
6. The field effect transistor of claim 5 , wherein A is selected form the group consisting of NH 4 + , CH 3 NH 3 + , CH 3 CH 2 NH 3 + and NH 2 CH═NH 2 + .
7. The field effect transistor of claim 1 , wherein the organic-inorganic perovskite is two-dimensional.
8. The field effect transistor of claim 1 , wherein hole mobility (μ h ) or electron mobility (μ e ) increases with decreasing temperature of the channel layer.
9. The field effect transistor of claim 1 , wherein μ e is 10 cm 2 /Vs to 200 cm 2 /Vs.
10. The field effect transistor of claim 9 having threshold voltage (V T ) of 5V to 15V.
11. The field effect transistor of claim 1 , wherein μ h is 10 cm 2 /Vs to 200 cm 2 /Vs.
12. The field effect transistor of claim 11 having V T of −5V to −15V.
13. The field effect transistor of claim 1 having μ e and μ h of at least 1 cm 2 /Vs.
14. The field effect transistor of claim 1 having a channel width of 200 μm to 1000 μm.
15. The field effect transistor of claim 1 having a channel length of 5 μm to 100 μm.
16. The field effect transistor of claim 1 , wherein the channel layer has thickness 200 nm to 500 nm.
17. The field effect transistor of claim 1 , wherein the organic-inorganic perovskite has grain size of at least 200 nm.
18. The field effect transistor of claim 1 , wherein the organic-inorganic perovskite has grain size of 200 nm to 2 μm.
19. The field effect transistor of claim 1 , wherein the organic-inorganic perovskite has surface roughness of 70 nm or less.
20. The field effect transistor of claim 1 , wherein the amorphous polymer is fluoropolymer.
21. The field effect transistor of claim 1 , wherein the polymeric surface of the dielectric layer comprises polymer electret.
22. The field effect transistor of claim 1 , wherein the dielectric layer comprises two or more polymeric layers.
23. The field effect transistor of claim 22 , wherein the dielectric layer exhibits a dielectric gradient.
24. The field effect transistor of claim 23 , wherein a polymer electret layer contacts the organic-inorganic perovskite of the channel layer.
25. The field effect transistor of claim 1 further comprising a work function alteration layer positioned between the channel layer and at least one of the source terminal and drain terminal.
26. A field effect transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals;
a channel layer in electrical communication with the source terminal and drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer; and
a work function alteration layer positioned between the channel layer and at least one of the source terminal and drain terminal, wherein the work function alteration layer comprises a self-assembled monolayer of a fluorinated compound.
27. The field effect transistor of claim 26 , wherein the fluorinated compound is a fluorinated thiol.
28. The field effect transistor of claim 27 , wherein the fluorinated thiol is 2,3,5,6-tetrafluoro-4-(trifluoromethyl)benzenethiol.
29. A field effect transistor comprising:
a source terminal, a drain terminal and a gate terminal;
a dielectric layer positioned between the gate terminal and the source and drain terminals; and
a channel layer in electrical communication with the source terminal and drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer,
wherein the field effect transistor exhibits electron mobility (μ e ) of 10-200 cm 2 /Vs and a subthreshold swing (S) of less than about 1 V/dec for holes and electrons.