IP Library Granted Patent US 10,651,346
Granted Patent B2
US 10,651,346 · App. 15/775,038 · Granted May 12, 2020

Assembly including a carrier having a glass material and an optoelectronic semiconductor component

Inventors: Frank Singer (Regenstauf, DE); Andreas Ploessl (Regensburg, DE)
Assignee: OSRAM OLED GmbH
H01L33/486H01L25/13H01L33/483H01L33/50H01L33/62H01L2224/04105H01L2224/18H01L2224/32225H01L2224/73267H01L2224/92244H01L2924/15153H01L2933/00
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Quick Facts
Patent No.
US 10,651,346
App. No.
15/775,038
Granted
May 12, 2020
Kind
B2
Abstract

An assembly includes a carrier including a glass material, including at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, and at least one surface of the semiconductor component connects to the carrier via a melted surface including glass.

Claims (20)

1. An assembly comprising a carrier comprising a glass material, comprising at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, at least one surface of the semiconductor component directly connects to the carrier via a melted surface comprising glass, the semiconductor component comprises contact pads, conductor tracks are arranged directly on a surface of the carrier and directly on the semiconductor component, the conductor tracks are guided from the carrier to the semiconductor component and connected with the contact pads, the conductor tracks are sintered conductor tracks, and the sintered conductor tracks are directly connected with a sinter layer to the surface of the carrier.

2. The assembly according to claim 1 , wherein at least a front side of the semiconductor component directly connects to the carrier via the melted surface comprising glass.

3. The assembly according to claim 1 , wherein at least one side surface of the semiconductor component directly connects to the carrier via a melted surface comprising glass.

4. the assembly of claim 1 , wherein the surface of the carrier and the top side of the semiconductor component are covered with a mirror layer.

5. The assembly according to claim 1 , wherein the melted surface is formed from glass material, and the glass material is arranged between the carrier and the semiconductor component and directly connects the carrier to the semiconductor component.

6. The assembly according to claim 1 , wherein conversion material is arranged in the melted surface.

7. The assembly according to claim 1 , wherein the semiconductor component at least partly comprises material trnsmissive to the electromagnetic radiation of the semiconductor component, and the semiconductor component comprises sapphire.

8. The assembly according to claim 1 , wherein the recess is formed in the form of a hole extending through the carrier, and a front side of the semiconductor component is assigned to an open surface of the recess.

9. The assembly according to claim 1 , wherein a plurality of carriers with at least one semiconductor component each are arranged one above another, the semiconductor components are formed as light emitting chips, and the light emitting chips emit different wavelengths of a red, a yellow and a blue wavelength spectrum to generate white light.

10. The assembly according to claim 1 , wherein the semiconductor component is formed as a light emitting chip, a light emitting diode or a laser diode or a sensor that receives electromagnetic radiation or a solar cell.

11. The assembly according to claim 1 , wherein the carrier consists of a porous first glass material into which a second glass material comprising a lower melting point is arranged in a manner at least adjoining the semiconductor component, and the second glass material forms the melted surface.

12. The assembly according to claim 1 , wherein the optoelectronic semiconductor component comprises a substrate and an active zone that transmits and/or receives electromagnetic radiation, the active zone is arranged on the substrate, and the substrate is directly connected by the melted surface to the carrier.

13. The assembly according to claim 1 , wherein the optoelectronic semiconductor component comprises a substrate and an active zone that transmits and/or receives electromagnetic radiation, the active zone is arranged on the substrate, and the active zone is directly connected by the melted surface to the carrier.

14. The assembly according to claim 1 , wherein the semiconductor layer comprises the active zone, and the active zone comprises at least one of metallic contacts and metallic conductor tracks.

15. An assembly comprising a carrier comprising a glass material, comprising a recess, wherein an optoelectronic semiconductor component is arranged in the recess of the carrier, the optoelectronic semiconductor component comprises a substrate and an active zone, the active zone is arranged on the substrte, the active zone transmits and/or receives electromagnetic radiation, the substrate is directly connected by a melted surface comprising glass to the carrier, the active zone comprises metallic contacts and metallic conductor tracks, further conductor tracks are directly arragned on a surface of the carrier and connected to the contact pads of the active zone, and the further conductor tracks are sintered conductor tracks connected by sinter layer to the surfave of the carrier.

16. The assembly according to claim 1 , wherein the conductor tracks are screen printed tracks.

17. The assembly according to claim 1 , wherein the conductor tracks are conductor tracks connected by a fuse layer with the carrier.

18. A method of forming the assembly according to claim 1 comprising directly depositing conductor tracks on a surface of the carrier and on the semiconductor component to be connected to the contact pads, and sintering the conductor tracks to the surface of the carrier.

19. The method of claim 18 , wherein the conductor tracks are applied on the surface of a hot carrier, the sintering of the conductor tracks to the surface of the carrier uses the high temperature above 300° C. of the carrier that is used to connect the carrier to the semiconductor component by the melted surface.

20. The method of claim 18 , wherein the conductor tracks comprise metals, and a vapor deposition method and photolithography method is used to form the conductor tracks.

Assignments (3)
MERGER Recorded Feb 17, 2026
From: OSRAM OLED GMBH
To: AMS-OSRAM INTERNATIONAL GMBH
Reel/Frame 074881/0104 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051464/0504 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 12, 2018
From: SINGER, FRANK; PLOESSL, ANDREAS
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 046054/0906 →
Priority Claims (1)
DE 10 2015 119 343 · Nov 10, 2015 · national
Continuity (1)
Related Publication 20180374996A1 · Dec 27, 2018