Implanted vacancy centers with coherent optical properties

1. A structure comprising:

a plurality of ion implanted, deterministically positioned optically active defects of negatively charged SiV − or GeV − centers, wherein each of the plurality of deterministically positioned optically active defects has a linewidth within a factor of one hundred of a lifetime limited linewidth of optical transitions of the plurality of deterministically positioned optically active defects, and

wherein the plurality of deterministically positioned optically active defects has an inhomogeneous distribution of wavelengths, wherein at least half of the plurality of deterministically positioned optically active defects have transition wavelengths within a less than 8 nm range.

2. The structure of claim 1 , comprising a diamond structure in which the plurality of deterministically positioned optically active defects are located.

3. The structure of claim 1 , wherein the plurality of deterministically positioned optically active defects comprise a plurality of atom-vacancy centers.

4. The structure of claim 1 , wherein the plurality of deterministically positioned optically active defects comprise a plurality of deterministically positioned SiV − centers.

5. The structure of claim 1 , wherein the plurality of deterministically positioned optically active defects comprise a plurality of deterministically positioned GeV − centers.

6. The structure of claim 4 , wherein the linewidths are within a factor of five of the lifetime limited linewidth of optical transitions of the plurality of deterministically positioned SiV − centers.

7. The structure of claim 5 , wherein the linewidths are within a factor of five of the lifetime limited linewidth of optical transitions of the plurality of deterministically positioned GeV − centers.

8. The structure of claim 4 , wherein a full-width at half-maximum of the plurality of deterministically positioned SiV − centers is in the range of 90 to 2500 MHz.

9. The structure of claim 4 , wherein a full-width at half-maximum of the plurality of deterministically positioned SiV − centers is in the range of 150 to 870 MHz.

10. The structure of claim 4 , wherein a full-width at half-maximum of the plurality of deterministically positioned SiV − centers is about 510 MHz.

11. The structure of claim 4 , wherein a full-width at half-maximum of the plurality of deterministically positioned SiV − centers is in the range of 170 to 530 MHz.

12. The structure of claim 4 , wherein a full-width at half-maximum of the plurality of deterministically positioned SiV − centers is about 350 MHz.

13. The structure of claim 5 , wherein a full-width at half-maximum of the plurality of deterministically positioned GeV − centers is in the range of 30 to 2500 MHz.

14. The structure of claim 5 , wherein a full-width at half-maximum of the plurality of deterministically positioned GeV − centers is in the range of 150 to 870 MHz.

15. The structure of claim 5 , wherein a full-width at half-maximum of the plurality of deterministically positioned GeV − centers is about 510 MHz.

16. The structure of claim 5 , wherein a full-width at half-maximum of the plurality of deterministically positioned GeV − centers is in the range of 170 to 530 MHz.

17. The structure of claim 5 , wherein a full-width at half-maximum of the plurality of deterministically positioned GeV − centers is about 350 MHz.

18. The structure of claim 4 , wherein at least half of the plurality of deterministically positioned SiV − centers have transition wavelengths within a 4 nm range.

19. The structure of claim 4 , wherein at least half of the plurality of deterministically positioned SiV − centers have transition wavelengths within a 3 nm range.

20. The structure of claim 4 , wherein at least half of the plurality of deterministically positioned SiV − centers have transition wavelengths within a 0.1 nm range.

21. The structure of claim 4 , wherein at least half of the plurality of deterministically positioned SiV − centers have transition wavelengths within a 0.05 nm.

22. The structure of claim 4 , wherein at least half of the plurality of deterministically positioned SiV − centers have transition wavelengths within a 0.03 nm range.

23. The structure of claim 5 , wherein at least half of the plurality of deterministically positioned GeV − centers have transition wavelengths within a 4 nm range.

24. The structure of claim 5 , wherein at least half of the plurality of deterministically positioned GeV − centers have transition wavelengths within a 3 nm range.

25. The structure of claim 5 , wherein at least half of the plurality of deterministically positioned GeV − centers have transition wavelengths within a 0.1 nm range.

26. The structure of claim 5 , wherein at least half of the plurality of deterministically positioned GeV − centers have transition wavelengths within a 0.05 nm.

27. The structure of claim 5 , wherein at least half of the plurality of deterministically positioned GeV − centers have transition wavelengths within a 0.03 nm range.

28. A method of producing the structure of claim 1 , the method comprising: defect the structure of claim 1 , the method comprising:

deterministically implanting at least one ion in a structure using a focused ion beam;

heating the structure in a vacuum at a first temperature to create at least one optically active defect; and

heating the structure in the vacuum at a second temperature to remove a plurality of other defects in the structure, wherein the second temperature is higher than the first temperature.

29. The method of claim 28 , wherein the at least one optically active defect is at least one atom-vacancy center.

30. The method of claim 28 , wherein the at least one optically active defect is an SiV − center.

31. The method of claim 28 , wherein the at least one optically active defect is a GeV − center.

32. The method of claim 30 , wherein the structure is diamond.

33. The method of claim 31 , wherein the structure is diamond.

34. The method of claim 28 , wherein the structure comprises a surface having less than 100 nm RMS roughness into which the at least one ion is implanted.

35. The method of claim 28 , wherein the structure comprises a surface having less than 10 nm RMS roughness into which the at least one ion is implanted.

36. The method of claim 28 , wherein the having less than 100 nm RMS roughness surface is produced through plasma etching.

37. The method of claim 28 , wherein deterministically implanting at least one ion in a structure using a focused ion beam comprises at least one of determining a number of implanted ions, determining a depth of implantation of the at least one ion, or determining a location of implantation of the at least one ion.

38. The method of claim 28 , wherein the pressure in the vacuum is less than 10 −5 Torr.

39. The method of claim 28 , wherein the first temperature is 600° C. to 1000° C.

40. The method of claim 28 , wherein the first temperature is about 800° C.

41. The method of claim 28 , wherein the second temperature is above 1000° C.

42. The method of claim 28 , wherein the second temperature is above 1000° C. to 1600° C.

43. The method of claim 28 , wherein the second temperature is about 1200° C.

44. The method of claim 28 , wherein the structure comprises a previously fabricated device.

45. The method of claim 28 , wherein the structure comprises at least one of an electrical device, an optical device, a micro-structured device, or a nano-structured device.

46. The method of claim 28 , wherein the pressure in the vacuum is less in the range of 10 −6 to 10 −10 Torr.

47. The structure of claim 1 , wherein the plurality of deterministically positioned optically active defects has an isotopic purity greater than a natural abundance of 92%.

48. The structure of claim 1 , wherein the plurality of deterministically positioned optically active defects has an isotopic purity greater than a natural abundance of 37%.