Composition for forming fine resist pattern and pattern forming method using same

1. A method for forming a resist pattern, comprising:

a) providing a substrate with a resist pattern prepared from a negative-tone lithography process;

b) coating the resist pattern with a shrink material composition for fattening a resist pattern prepared from a negative-tone lithography process, comprising at least one polymer and at least one organic solvent, wherein the at least one polymer is

(A) a homopolymer or copolymer of the following formula:

wherein n is 96 to 250

or

(B) a copolymer of the following formula

wherein a and b is a number indicating the molar ratio of each repeating unit wherein

the molar ratio of the repeating unit including pyridine ring is 50-90%

c) inter-mixing a portion of the shrink material in contact with the resist pattern; and

d) removing a portion of the shrink material which is not inter-mixed with a removal solution.

2. The method according to claim 1 , wherein the substrate is heated to cause an inter-mixing of the shrink material with the resist pattern.

3. The method for forming a resist pattern according to claim 1 , wherein the at least one organic solvent is selected from a ketone, an ether, an ester and an alcohol and mixtures thereof.

4. The method for forming a resist pattern according to claim 1 , wherein said at least one polymer is contained in an amount of 0.01 to 20 wt % based on the total weight of the composition.

5. The method for forming a resist pattern according to claim 1 , wherein said polymer has a weight average molecular weight in the range from 10,000 to 20,000 g/mol.

6. The method for forming a resist pattern according to claim 1 , wherein said at least one polymer is a homopolymer the following formula:

wherein n is 96 to 250.

7. The method for forming a resist pattern according to claim 1 , wherein said polymer is a copolymer of the formula:

wherein a and b is a number indicating the molar ratio of each repeating unit wherein the molar ratio of the repeating unit including pyridine ring is 50-90%.

8. The method for forming a resist pattern according to claim 1 , wherein the polymer is a copolymer which is 2-Vinylpyridine/styrene copolymer.

9. The method for forming a resist pattern according to claim 1 , wherein the polymer is a homopolymer which is poly (4-vinylpyridine).

10. The method for forming a resist pattern according to claim 1 , wherein the at least one polymer is

A. a homopolymer which is selected from the group consisting of poly(2-vinylpyridine), poly(3-vinylpyridine) and poly(4-vinylpyridine), or

B. a copolymer which is selected from the group consisting of poly(2-vinylpyridine-co-styrene), poly(4-vinylpyridine-co-methylvinylether), and poly(4-vinylpyridine-co-methacrylic acid).

11. The method for forming a resist pattern as claimed in claim 1 , wherein the at least one polymer is

(A) a homopolymer or copolymer of the following formula:

wherein n is 96 to 250

or

(B) a copolymer of the following formula

12. A method for forming a resist pattern, comprising:

a) providing a substrate with a resist pattern prepared from a negative-tone lithography process;

b) coating the resist pattern with a shrink material composition for fattening a resist pattern prepared from a negative-tone lithography process, comprising at least one polymer and at least one organic solvent, wherein the at least one polymer wherein the polymer is

a homopolymer which is selected form the group consisting of poly(3,5 pyridine) and poly(4-vinylpyridine) or a 2-Vinylpyridine/styrene copolymer,

c) inter-mixing a portion of the shrink material in contact with the resist pattern; and

d) removing a portion of the shrink material which is not inter-mixed with a removal solution.