Semiconductor device manufacturing method
Provided is a semiconductor device manufacturing method which can suppress the occurrence of positional deviation or inclination of a semiconductor element when the semiconductor element is fixed so as to be sandwiched-between two insulating substrates. The semiconductor device manufacturing method includes: obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate with a first pre-sintering layer sandwiched therebetween; temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode.
1. A semiconductor device manufacturing method comprising:
a step A of obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate, with a first sheet-like pre-sintering layer sandwiched therebetween;
a step B of, after the step A, temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate, with a second sheet-like pre-sintering layer sandwiched therebetween, the second sheet-like pre-sintering layer being provided on a side opposite to the first sheet-like pre-sintering layer, to obtain a semiconductor device precursor; and
a step C of, after the step B, simultaneously heating the first sheet-like pre-sintering layer and the second sheet-like pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode,
wherein the step A comprises:
a step A-1 of preparing a lower substrate including the first insulating substrate and the first electrode formed on the first insulating substrate;
a step A-2 of preparing the semiconductor element in which the first sheet-like pre-sintering layer is stacked on a first surface of the semiconductor element and the second sheet-like pre-sintering layer is stacked on a second surface of the semiconductor element; and
a step A-3 of temporarily adhering the semiconductor element prepared in the step A-2 on the first electrode with the first sheet-like pre-sintering layer sandwiched therebetween,
wherein the step A-2 comprises:
a step X of stacking the first sheet-like pre-sintering layer on a first surface of a semiconductor wafer, and stacking the second sheet-like pre-sintering layer on a second surface of the semiconductor wafer, to obtain the semiconductor wafer including the first sheet-like pre-sintering layer on the first surface of the semiconductor wafer and the second sheet-like presintering layer on the second surface of the semiconductor wafer; and
a step Y of making the semiconductor wafer obtained in the step X and including the first sheet-like pre-sintering layer formed on the first surface of the semiconductor wafer and the second sheet-like presintering layer formed on the second surface of the semiconductor wafer into individual pieces wherein the first sheet-like pre-sintering layer and the second sheet-like pre-sintering layer contain a metal-based compound and a binder material.
2. The semiconductor device manufacturing method according to claim 1 , wherein the semiconductor element is a thermoelectric element.