Flexible electronic device and manufacturing method therefor
Provided are a flexible electronic device and a manufacturing method thereof. The flexible electronic device ( 200 ) comprises a flexible substrate ( 210 ) and a device layer formed on the flexible substrate ( 210 ). The device layer comprises a semiconductor structure ( 220 ) and a wire structure ( 230 ) connected to the semiconductor structure, the wire structure ( 230 ) having an extension direction same to a channel direction of the semiconductor structure ( 220 ). The extension direction of the first wire structure ( 230 ) forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate ( 210 ). In the flexible electronic device ( 200 ) and manufacturing method thereof of the present invention, the channel direction of the semiconductor structure ( 220 ) and the extension direction of the first wire structure ( 230 ) are adjusted, such that the semiconductor structure ( 220 ) and the first wire structure ( 230 ) are least affected by a stress, thus ensuring electrical property and flexibility of the flexible electronic device ( 200 ).
1. A flexible electronic device, comprising: a flexible substrate and a device layer formed on the flexible substrate, wherein:
the device layer comprises a semiconductor structure and a first wire structure connected to the semiconductor structure, the first wire structure extending along an extending direction same to a channel direction of the semiconductor structure;
the extending direction of the first wire structure forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate;
the semiconductor structure is a thin film transistor including a gate, a drain, and a channel, and the first wire structure matches up with the semiconductor structure to form an electrical connection to a device; and
a second wire structure provided on an edge of the flexible substrate, the second wire structure extending along an extending direction parallel to an edge line of the flexible substrate, a plurality of through holes having borders respectively spaced and being formed in the second wire structure, each of the through holes having a parallelogram shape with a diagonal line of the parallelogram extending along a direction same to the stretching direction of the flexible substrate.
2. The flexible electronic device of claim 1 , wherein the included angle ranges from 40° to 70°.
3. The flexible electronic device of claim 1 , wherein the flexible electronic device is a flexible flat panel display device, the device layer having a plurality of pixel units, a boundary of the pixel unit being formed in a parallelogram shape with a diagonal line thereof extending along a direction same to the stretching direction of the flexible substrate.
4. The flexible electronic device of claim 3 , wherein an included angle formed between a side edge of the parallelogram shape and the corresponding diagonal line of the parallelogram shape ranges from 40° to 70°.
5. The flexible electronic device of claim 3 , wherein the flexible electronic device is a flexible liquid crystal display.
6. The flexible electronic device of claim 3 , wherein the flexible electronic device is a flexible organic light-emitting display.
7. A method for manufacturing a flexible electronic device, comprising:
providing a flexible substrate; and
respectively forming a semiconductor structure and a first wire structure on the flexible substrate, wherein the semiconductor structure has a channel direction same to an extending direction of the first wire structure, the channel direction of the semiconductor structure forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate, wherein the semiconductor structure is a thin film transistor including a gate, a drain, and a channel, and the first wire structure matches up with the semiconductor structure to form an electrical connection to a device and wherein the device layer further comprises a second wire structure provided on an edge of the flexible substrate, the second wire structure extending along an extending direction parallel to an edge line of the flexible substrate; and a plurality of through holes having borders respectively spaced and being formed in the second wire structure, each of the through holes having a parallelogram shape with a diagonal line of the parallelogram extending along a direction same to the stretching direction of the flexible substrate.
8. A method for manufacturing a flexible electronic device, comprising:
providing a flexible substrate;
respectively forming a plurality of pixel units, a first wire structure and a second wire structure on the flexible substrate, the pixel unit having a semiconductor structure, the semiconductor structure having a channel direction same to an extending direction of the first wire structures, the channel direction of the semiconductor structure forming an included angle smaller than 90° with respect to a stretching direction of the flexible substrate;
providing the second wire structure on an edge of the flexible substrate, the second wire structure extending along an extending direction parallel to an edge line of the flexible substrate; and
forming a plurality of through holes in the second wire structure, the through holes each having a parallelogram shape with a diagonal line of the parallelogram extending along a direction same to the stretching direction of the flexible substrate, wherein the plurality of holes having borders respectively spaced,
the semiconductor structure is a thin film transistor including a gate, a drain, and a channel, and the first wire structure matches up with the semiconductor structure to form an electrical connection to a device.
9. The flexible electronic device of claim 4 , wherein the included angle formed between a side edge of the parallelogram shape and the corresponding diagonal line of the parallelogram shape is substantially 60°.
10. The method of claim 7 , wherein the forming of a semiconductor structure and a first wire structure on the flexible substrate comprises forming a semiconductor structure and a first wire structure on the flexible substrate by graphic process.