Semiconductor device
A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.
1. A semiconductor device comprising:
a semiconductor element;
a lead electrode comprising a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode;
a cooling mechanism disposed on a lower surface side of the semiconductor element; and
a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, and the cooling mechanism, the heat dissipation mechanism comprising at least one insulating layer,
wherein the heat dissipation mechanism comprises
a first heat dissipation block connected to the lower surface of the lead electrode, the lower surface being more adjacent to the other-end side than the one end,
the insulating layer at least partly connected to a lower surface of the first heat dissipation block, and
a heat dissipation material connected to a lower surface of the insulating layer,
wherein the lead electrode comprises a hole penetrating from an upper surface of the lead electrode to the lower surface of the lead electrode, and
wherein an upper surface of the first heat dissipation block comprises a screw hole in a position superposed on the hole of the lead electrode in plan view.
2. The semiconductor device according to claim 1 ,
wherein the insulating layer comprises
a first portion disposed between the semiconductor element and the cooling mechanism, and
a second portion connected to the lower surface of the first heat dissipation block, and
wherein the first portion and the second portion are continuously formed.
3. The semiconductor device according to claim 1 ,
wherein the insulating layer comprises
a first portion disposed between the semiconductor element and the cooling mechanism, and
a second portion connected to the lower surface of the first heat dissipation block,
wherein the first portion and the second portion are arranged to be spaced from each other, and
wherein the heat dissipation material comprises
a third portion connected to a lower surface of the first portion, and
a fourth portion connected to a lower surface of the second portion.
4. The semiconductor device according to claim 1 ,
wherein the semiconductor device further comprises a nut comprising the screw hole in a position superposed on the hole of the lead electrode in plan view, and
wherein the first heat dissipation block is connected at least to a lower surface of the nut.
5. The semiconductor device according to claim 4 , wherein the first heat dissipation block is connected to the lower surface of the nut and side surfaces of the nut.
6. The semiconductor device according to claim 4 , further comprising a resin portion provided to cover at least part of the nut and the one end of the lead electrode.
7. The semiconductor device according to claim 2 , further comprising:
a busbar comprising one end connected to the other-end side of the lead electrode; and
a second heat dissipation block connected to a lower surface of the busbar, the lower surface being more adjacent to an other-end side of the busbar than the one end of the busbar,
wherein the second portion of the insulating layer is connected also to a lower surface of the second heat dissipation block.
8. The semiconductor device according to claim 7 ,
wherein the other-end side of the lead electrode comprises a projection, and
wherein the busbar is welded to the projection of the lead electrode.
9. The semiconductor device according to claim 1 , further comprising a resin portion provided to cover at least part of the first heat dissipation block and the one end of the lead electrode.
10. The semiconductor device according to claim 9 ,
wherein the resin portion comprises
a fifth portion covering at least the part of the first heat dissipation block, and
a sixth portion covering the one end of the lead electrode, and
wherein the fifth portion and the sixth portion are arranged to be spaced from each other.
11. The semiconductor device according to claim 1 ,
wherein the heat dissipation mechanism comprises
a heat spreader connected to a lower surface of the semiconductor element, and connected to the lower surface of the lead electrode with a first insulating layer of the insulating layer interposed there between,
a second insulating layer connected to a lower surface of the heat spreader, and
a heat dissipation material connected to a lower surface of the second insulating layer.
12. The semiconductor device according to claim 11 , wherein the lower surface of the lead electrode, which is connected to the heat spreader, is provided to be bent toward the heat spreader.
13. The semiconductor device according to claim 11 , further comprising a heat dissipation block directly connected to the lower surface of the lead electrode, the lower surface being more adjacent to the other-end side than the one side,
wherein the heat spreader is connected to the lower surface of the lead electrode with the heat dissipation block and the first insulating layer interposed therebetween.