Semiconductor substrate and display device
A semiconductor film 21 is provided so as to overlap with a light-shielding film 11 when viewed in a plan view. A second insulating film 30 has a contact hole CH 1 that reaches a source electrode 22 and a drain electrode 23 . A gate electrode 41 is provided on the second insulating film 30 so as to overlap with the semiconductor film 21 when viewed in a plan view, and at the same time, so as to overlap with none of the source electrode 22 and the drain electrode 23 when viewed in a plan view. A third insulating film 50 is provided on the second insulating film 30 so as to cover the gate electrode 41 , and at the same time, so as to be in contact with the source electrode 22 and the drain electrode 23 through the contact hole CH 1.
1. A semiconductor substrate comprising:
a substrate;
a light-shielding film provided on the substrate;
a first insulating film provided on the substrate so as to cover the light-shielding film;
a semiconductor film provided on the first insulating film so as to overlap with the light-shielding film when viewed in a plan view;
a source electrode and a drain electrode provided on the first insulating film so that a part of the same covers the semiconductor film;
a second insulating film provided on the first insulating film so as to cover the semiconductor film, the source electrode, and the drain electrode, the second insulating film having a contact hole that reaches the source electrode and the drain electrode;
a gate electrode provided on the second insulating film so as to overlap with the semiconductor film when viewed in a plan view, and at the same time, so as to overlap with none of the source electrode and the drain electrode when viewed in a plan view; and
a third insulating film provided on the second insulating film so as to cover the gate electrode, and at the same time, so as to be in contact with the source electrode and the drain electrode through the contact hole.
2. The semiconductor substrate according to claim 1 ,
wherein the third insulating film, in contact with the source electrode and the drain electrode through the contact hole, is further in contact with the semiconductor film, and
the third insulating film has a hydrogen concentration of 1×10 22 cm −3 or more.
3. The semiconductor substrate according to claim 1 ,
wherein the semiconductor film is made of an oxide semiconductor.
4. The semiconductor substrate according claim 3 ,
wherein the semiconductor film is made of an In—Ga—Zn—O-based oxide semiconductor.
5. The semiconductor substrate according to claim 3 ,
wherein the semiconductor film is made of a crystalline oxide semiconductor.
6. A display device comprising the semiconductor substrate according to claim 1 .