Integrated circuit, system for and method of forming an integrated circuit

1. An integrated circuit structure comprising:

a first well, the first well comprising:

a first dopant type;

a first portion extending in a first direction and having a first width, and

a second portion adjacent to the first portion, the second portion extending in the first direction and having a second width greater than the first width;

a first set of implants in the first portion of the first well, each implant of the first set of implants having the first dopant type and being separated from each other in the first direction, and at least one implant of the first set of implants being configured to be coupled to a first supply voltage, and

a second set of implants in the second portion of the first well, each implant of the second set of implants having a second dopant type different from the first dopant type and being separated from each other in the first direction, and the second set of implants being separated from the first set of implants in a second direction different from the first direction.

2. The integrated circuit structure of claim 1 , further comprising:

a second well adjacent to the second portion of the first well, the second well having the second dopant type and a third width, the second well being separated from the first portion of the first well in the second direction, and

a third set of implants in the second well, each implant of the third set of implants having the second dopant type and being separated from each other in the first direction, and at least one implant of the third set of implants being configured to be coupled to a second supply voltage.

3. The integrated circuit structure of claim 2 , wherein

the second portion of the first well is between the first portion of the first well and the second well;

the second supply voltage is different from the first supply voltage;

the second width of the second portion of the first well is greater than the third width of the second well; or

the first width of the first portion of the first well is substantially equal to the third width of the second well.

4. The integrated circuit structure of claim 2 , wherein

the first portion of the first well and the first set of implants correspond to a first portion of a tap cell having the first dopant type, and

the second well and the third set of implants correspond to a second portion of the tap cell having the second dopant type.

5. The integrated circuit structure of claim 1 , further comprising:

a set of gates extending in the second direction and overlapping the first well, at least an implant of the first set of implants is between a pair of gates of the set of gates, and the set of gates being separated from each other in the first direction.

6. The integrated circuit structure of claim 5 , further comprising:

a set of standard cells comprising a set of transistors, the set of standard cells being arranged in rows and columns,

wherein the second portion of the first well continuously extends through the set of standard cells in the first direction.

7. The integrated circuit structure of claim 6 , wherein the set of standard cells further comprises:

a second well extending in the first direction, separated from the first portion of the first well in the first direction, and having the second dopant type, and

a third set of implants in the second well, each implant of the third set of implants having the first dopant type and being separated from each other in the first direction.

8. The integrated circuit structure of claim 6 , wherein

the second set of implants are arranged to continuously extend through the set of standard cells in the first direction, and

the first portion of the first well and the first set of implants are arranged to not continuously extend through the set of standard cells in the first direction.

9. The integrated circuit structure of claim 7 , wherein the set of transistors comprises:

a sub-set of P-type transistors being located within the second portion of the first well, and

a sub-set of N-type transistors being located in the second well.

10. An integrated circuit structure comprising:

a first well comprising:

a first dopant type;

a first portion extending in a first direction and having a first width; and

a second portion adjacent to the first portion, the second portion extending in the first direction and having a second width less than the first width;

a first set of implants in the first portion of the first well, each implant of the first set of implants having a second dopant type and being separated from each other in the first direction, the second dopant type being different from the first dopant type;

a second set of implants, each implant of the second set of implants having the first dopant type and being separated from each other in the first direction, at least one implant of the second set of implants being configured to be coupled to a first voltage supply, and the second set of implants being in the second portion of the first well, and

a first set of standard cells comprising a first set of transistors, the first set of standard cells being arranged in rows and columns,

wherein the first portion of the first well extends through the first set of standard cells in the first direction.

11. The integrated circuit structure of claim 10 , further comprising:

a second well adjacent to the first portion of the first well, the second well having the second dopant type and a third width different from the first width, the second well being separated from the second portion of the first well in a second direction different from the first direction, and

a third set of implants in the second well, each implant of the third set of implants having the second dopant type and being separated from each other in the first direction, and at least one implant of the third set of implants being configured to be coupled to a second voltage supply different from the first voltage supply.

12. The integrated circuit structure of claim 11 , further comprising:

a third well adjacent to the second well, and

a second set of standard cells comprising a second set of transistors in the third well, the second set of standard cells being adjacent to the second well, and being arranged in rows,

wherein the third set of implants do not extend through the second set of standard cells in the first direction.

13. The integrated circuit structure of claim 12 , wherein

the first set of transistors comprises:

a sub-set of P-type transistors being located within the first portion of the first well, and

the second set of transistors comprises:

a sub-set of N-type transistors being located in the third well.

14. The integrated circuit structure of claim 11 , wherein

the second portion of the first well and the second set of implants correspond to a first portion of a tap cell having the first dopant type, and

the second well and the third set of implants correspond to a second portion of the tap cell having the second dopant type.

15. The integrated circuit structure of claim 10 , wherein the first set of implants extends through the first set of standard cells in the first direction.

16. An integrated circuit structure comprising:

a first well comprising:

a first dopant type;

a first portion extending in a first direction and having a first width; and

a second portion adjacent to the first portion, the second portion extending in the first direction and having a second width less than the first width;

a first set of implants in the first portion of the first well, each implant of the first set of implants having a second dopant type, and being separated from each other in the first direction, the second dopant type being different from the first dopant type;

a second well adjacent to the first portion of the first well, the second well having the second dopant type and a third width different from the first width;

a second set of implants in the second well, each implant of the second set of implants having the second dopant type and being separated from each other in the first direction, and at least one implant of the second set of implants being configured to be coupled to a first voltage supply; and

a third set of implants in the second portion of the first well, each implant of the third set of implants having the first dopant type and being separated from each other in the first direction, and at least one implant of the third set of implants being configured to be coupled to a second voltage supply different from the first voltage supply,

wherein the first portion of the first well is between the second portion of the first well and the second well.

17. The integrated circuit structure of claim 16 , further comprising:

a set of standard cells comprising a set of transistors, the set of standard cells being arranged in rows and columns,

wherein the first portion of the first well continuously extends through the set of standard cells in the first direction, and

wherein the first set of implants in the first portion of the first well extends through the set of standard cells in the first direction.

18. The integrated circuit structure of claim 17 , wherein

the second portion of the first well and the third set of implants correspond to a first portion of a tap cell having the first dopant type, and

the second well and the second set of implants correspond to a second portion of the tap cell having the second dopant type.

19. The integrated circuit structure of claim 16 , further comprising:

a set of gates extending in a second direction different from the first direction, and overlapping the first well and the second well, and each of the gates of the set of gates being separated from each other in the first direction.

20. The integrated circuit structure of claim 19 , wherein

at least an implant of the first set of implants is between a pair of gates of the set of gates;

at least an implant of the second set of implants is between the pair of gates of the set of gates; and

at least an implant of the third set of implants is between the pair of gates of the set of gates.