IP Library Granted Patent US 10,262,982
Granted Patent B2
US 10,262,982 · App. 15/785,447 · Granted Apr 16, 2019

Integrated circuits with standard cell

Inventors: Chen-Hsien Hsu (Hsinchu County, TW); Chien-Fu Chen (Miaoli County, TW); Cheng-Yang Tsai (Kaohsiung, TW); Wei-Jen Wang (Tainan, TW); Chao-Wei Lin (New Taipei, TW); Zhi-Hong Huang (Tainan, TW); Cheng-Tsung Ku (Taichung, TW); Chin-Sheng Yang (Hsinchu, TW)
Assignee: UNITED MICROELECTRONICS CORP.
H01L27/0207H01L23/528H01L23/5226H01L27/0924H03K19/0948H01L29/167H03K19/20
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Quick Facts
Patent No.
US 10,262,982
App. No.
15/785,447
Granted
Apr 16, 2019
Kind
B2
Abstract

The present invention provides an integrated circuit with a standard cell of an inverter. The integrated circuit includes: a first metal line and a second metal line stretching along a first direction; a first dummy gate and a second dummy gate stretching along a second direction; Plural fin structures stretching along the first direction; A gate structure disposed on the fin structures and stretching along the second direction; Two long contact plugs disposed at one side of the gate structure; two short contact plugs disposed at the other side of the gate structure; a gate contact plug disposed on the gate structure; Plural via plugs disposed on the long contact plugs, the short contact plugs and the gate contact plugs; A metal layer includes the first metal line, the second metal line, a third metal line and a fourth metal line.

Claims (18)

1. An integrated circuit with a standard cell, comprising:

a first metal line and a second metal line, extending along a first direction;

a set of first dummy gates and a set of second dummy gates, extending along a second direction, wherein a region encompassed by the first metal line, the second metal line, the set of first dummy gates and the set of second dummy gates is defined as a standard cell region, and the standard cell region has an N-type region and a P-type region;

a plurality of fin structures disposed in the standard cell region, wherein the fin structures are parallel to the first direction;

a gate structure disposed in the standard cell region, being on the fin structures and parallel to the second direction;

two short contact plugs and two long contact plugs disposed in the standard cell region, wherein the long contact plugs are disposed at a side of the gate structure and the short contact plugs are disposed at the other side of the gate structure;

a gate contact plug disposed on the gate structure;

a plurality of via plugs disposed on and electrically connected to the long contact plugs, the short contact plugs and the gate contact plug, wherein one of the via plugs electrically connected to the long contact plugs where outside the N-type region or the P-type region, and another one of the via plugs electrically connected to the short contact plugs where within the N-type region or the P-type region, and the via plugs electrically connected to the long contact plugs and the short contact plugs are asymmetric with each other; and

a metal layer disposed on and electrically connected to the via plugs, wherein the metal layer comprises the first metal line, the second metal line, a third metal line and a fourth metal line.

2. The integrated circuit according to claim 1 , wherein the set of first dummy gates comprise two first dummy gates which do not contact each other, and the set of second dummy gates comprise two second dummy gates which do not contact each other.

3. The integrated circuit according to claim 1 , wherein an N number of the fin structures are disposed in the P-type region and an M number of the fin structures are disposed in the N-type region, N and M are odd numbers and N is greater than or equal to M.

4. The integrated circuit according to claim 1 , wherein projections along the first direction from the two long contact plugs completely coincide to each other, and projections along the first direction from the two short contact plugs completely coincide to each other.

5. The integrated circuit according to claim 1 , wherein one of the long contact plugs and one of the short contact plugs extend across the P-type region, and the other one of the long contact plugs and the other one of the short contact plugs extend across the N-type region.

6. The integrated circuit according to claim 1 , wherein the two long contact plugs further extend to outside of the standard cell region.

7. The integrated circuit according to claim 1 , wherein the via plugs comprise two short via plugs, two long via plugs and one gate via plug.

8. The integrated circuit according to claim 7 , wherein the first metal line connects one of the long contact plugs, the second metal line connects the other one of the long contact plugs.

9. The integrated circuit according to claim 7 , wherein the third metal line connects the gate via plug.

10. The integrated circuit according to claim 7 , wherein the fourth metal line connects the two short via plugs.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 17, 2017
From: HSU, CHEN-HSIEN; CHEN, CHIEN-FU; TSAI, CHENG-YANG; WANG, WEI-JEN; LIN, CHAO-WEI; HUANG, ZHI-HONG; KU, CHENG-TSUNG; YANG, CHIN-SHENG
To: UNITED MICROELECTRONICS CORP.
Reel/Frame 043876/0797 →
Priority Claims (1)
CN 2017 1 0830604 · Sep 15, 2017 · national
Continuity (1)
Related Publication 20190088638A1 · Mar 21, 2019