Method for making semiconductor device with stacked analog components in back end of line (BEOL) regions
A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first dielectric layer, filling the first trench with electrically conductive material, removing upper portions of the electrically conductive material to define a lower conductive member with a recess thereabove, forming a filler dielectric material in the recess to define a second trench. The method may further include filling the second trench with electrically conductive material to define an upper conductive member, forming a second dielectric layer over the first dielectric layer and upper conductive member, forming a first via through the second dielectric layer and underlying filler dielectric material to the lower conductive member, and forming a second via through the second dielectric layer to the upper conductive member.
1. A device, comprising:
a first dielectric layer;
a first trench in the first dielectric layer;
a first conductive layer in the trench, the first conductive layer having a first area;
a second dielectric layer on the first conductive layer in the trench;
a second trench in the second dielectric layer; and
a second conductive layer in the second trench, the second conductive layer having a second area that is less than the first area.
2. The device of claim 1 , further comprising:
a first contact coupled to the first conductive layer in the first trench; and
a second contact coupled to the second conductive layer in the second trench.
3. The device of claim 2 , further comprising a third dielectric layer on the second conductive layer and on the second dielectric layer, the first and second contacts extending through the third dielectric layer.
4. The device of claim 1 , further comprising a third dielectric layer in the first trench between the first dielectric layer and the first conductive layer.
5. The device of claim 4 , further comprising a fourth dielectric layer in the second trench between the second dielectric layer and the second conductive layer.
6. The device of claim 1 , further comprising
a third dielectric layer on the second conductive layer in the first trench;
a third trench in the third dielectric layer; and
a third conductive layer in the third trench.
7. The device of claim 6 , further comprising:
a first contact coupled to the first conductive layer in the first trench;
a second contact coupled to the second conductive layer in the second trench; and
a third contact coupled to the third conductive layer in the third trench.
8. The device of claim 6 wherein the third conductive layer has a third area that is less than the second area.
9. A device, comprising:
a first dielectric layer;
a first trench in the first dielectric layer, the first trench having a first area, a first portion of the first area being more narrow than a second portion of the first area;
a first conductive layer in the first area of the first trench;
a second dielectric layer on the first conductive layer;
a second trench in the second dielectric layer, the second trench having a second area that is rectangular; and
a second conductive layer in the second area of the second trench.
10. The device of claim 9 , further comprising:
a first contact coupled to the first conductive layer in the first trench; and
a second contact coupled to the second conductive layer in the second trench.
11. The device of claim 10 , further comprising a third dielectric layer on the second conductive layer and on the second dielectric layer, the first and second contacts extending through the third dielectric layer.
12. The device of claim 9 , further comprising a third dielectric layer in the first trench between the first dielectric layer and the first conductive layer.
13. The device of claim 12 , further comprising a fourth dielectric layer in the second trench between the second dielectric layer and the second conductive layer.
14. A device, comprising:
a first dielectric layer;
a first trench in the first dielectric layer;
a second dielectric layer in the first trench;
a first conductive layer on the second dielectric layer;
a third dielectric layer on the first conductive layer;
a second trench in the third dielectric layer;
a fourth dielectric layer in the second trench; and
a second conductive layer on the fourth dielectric layer.
15. The device of claim 14 , further comprising a fifth dielectric layer on the second conducive layer.
16. The device of claim 14 , further comprising:
a first contact coupled to the first conductive layer in the first trench; and
a second contact coupled to the second conductive layer in the second trench.
17. The device of claim 16 , further comprising:
a third contact coupled to the first conductive layer in the first trench; and
a fourth contact coupled to the second conductive layer in the second trench.