Optoelectronic semiconductor component
An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face. The base member has a thickness which amounts to at most 250 μm.
1. An optoelectronic semiconductor component comprising:
a connection carrier with a mounting face and an electrically insulating base member;
an optoelectronic semiconductor chip, which is arranged on the mounting face of the connection carrier; and
a radiation-transmissive body having four side faces,
wherein the radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner,
wherein the four side faces of the radiation-transmissive body are arranged lateral to the optoelectronic semiconductor chip,
wherein the radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face, and
wherein a planarisation layer is arranged on at least the at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face.
2. The optoelectronic semiconductor component according to claim 1 , wherein the base member is made of a ceramic material.
3. The optoelectronic semiconductor component according to claim 1 , wherein the radiation-transmissive body has a height and wherein the sum of the thickness of the base member of the connection carrier and the height of the radiation-transmissive body amounts to at least 700 μm and at most 800 μm.
4. The optoelectronic semiconductor component according to claim 1 , wherein the thickness of the base member is at least 100 μm.
5. The optoelectronic semiconductor component according to claim 1 , wherein the at least one side face, which extends at least in places at an angle of between 60° and 70° to the mounting face, is produced by a singulation process.
6. The optoelectronic semiconductor component according to claim 1 , wherein the radiation-transmissive body directly adjoins the mounting face of the connection carrier.
7. The optoelectronic semiconductor component according to claim 1 , wherein the planarisation layer is applied to the at least one side face of the radiation-transmissive body, which side face is produced by a singulation process.
8. The optoelectronic semiconductor component according to claim 1 , wherein the four side faces of the radiation transmissive body face away from the optoelectronic semiconductor chip.
9. The optoelectronic semiconductor component according to claim 1 , wherein the planarization layer is arranged exclusively on the at least one side face.
10. An optoelectronic semiconductor component comprising:
a connection carrier with a mounting face;
an optoelectronic semiconductor chip, which is arranged on the mounting face of the connection carrier; and
a radiation-transmissive body having four side faces,
wherein the radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner,
wherein the four side faces of the radiation-transmissive body are arranged lateral to the optoelectronic semiconductor chip,
wherein the radiation-transmissive body comprises at least one side face which extends at least in places at an angle of less than 90° to the mounting face, and
wherein the optoelectronic semiconductor chip is arranged non-centered relative to the radiation-transmissive body,
wherein a planarisation layer is arranged on the at least one side face which extends at least in places at an angle of less than 90° to the mounting face.
11. The optoelectronic semiconductor component according to claim 10 , all four side faces of the radiation-transmissive body extend at least in places at an angle of less than 90° to the mounting face.