Precursors and flowable CVD methods for making low-k films to fill surface features

1. A method for depositing a silicon-containing film, comprising:

placing a substrate comprising at least one surface feature into a reactor;

adjusting the reactor to a first pressure;

introducing at least one organoaminosilane compound and at least one multifunctional organoamine compound into the reactor:

wherein the at least one organoaminosilane compound has the structure according to Formula I:

(R 1 R 2 N) 4-n Si—R 3 n   (I),

wherein R 1 , R 2 and R 3 are selected from the group consisting of hydrogen, C 1 to C 10 linear or branched alkyl, cyclic alkyl, alkenyl, alkynyl, and aryl;

wherein n=0, 1, 2, 3;

wherein at least one of R 1 , R 2 and R 3 is not hydrogen;

wherein the at least one multifunctional organoamine compound has the structure according to Formula II:

NR 4 R 5 R 6   (II),

wherein R 4 , R 5 and R 6 are each independently selected from the group consisting of H, a C 1 -C 4 alkylmonoamino group, a C 1 -C 4 alkyldiamino group, and a C 1 -C 4 alkyltriamino group; and

wherein at least one of R 4 , R 5 and R 6 is not hydrogen;

permitting the at least one organoaminosilane compound, and the at least one multifunctional organoamine compound, to react and form an oligomer that condenses on the substrate because its vapor pressure is less than the first pressure to form a flowable liquid oligomer;

wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature;

wherein the at least one multifunctional organoamine compound is ethylenediamine and at least one additional multifunctional organoamine compound selected from the group consisting of

and

wherein the at least one organoaminosilane compound is tetrakis-n-propylaminosilane.

2. The method of claim 1 wherein the permitting steps further include an energy source being present.

3. The method of claim 2 wherein the energy source is heat.

4. The method of claim 2 wherein the energy source is plasma.

5. The method of claim 4 wherein the plasma is selected from the group consisting of a nitrogen plasma, a plasma comprising nitrogen and helium, a plasma comprising nitrogen and argon, an ammonia plasma, a plasma comprising ammonia and helium, a plasma comprising ammonia and argon, helium plasma, argon plasma, hydrogen plasma, a plasma comprising hydrogen and helium, a plasma comprising hydrogen and argon, a plasma comprising ammonia and hydrogen, an organic amine plasma, a plasma comprising oxygen, a plasma comprising oxygen and hydrogen, and mixtures thereof.

6. The method of claim 4 wherein the plasma is selected from the group consisting of a carbon plasma or a hydrocarbon plasma, a plasma comprising hydrocarbon and helium, a plasma comprising hydrocarbon and argon, a carbon dioxide plasma, a carbon monoxide plasma, a plasma comprising a hydrocarbon and hydrogen, a plasma comprising a hydrocarbon and nitrogen, a plasma comprising hydrocarbon and oxygen, and mixture thereof.

7. The method of claim 2 further comprising exposing the at least one organoaminosilane compound and the multifunctional organoamine compound to a plasma energy source.

8. The method of claim 1 further comprising the step of subjecting the coating to a thermal treatment at one or more temperatures between about 100° C. to about 1000° C. to densify at least a portion of the coating and form a hardened layer.

9. The method of claim 8 further comprising the step of exposing the hardened layer to energy selected from the group consisting of a plasma, infrared light, chemical treatment, an electron beam, or UV light to form the final silicon-containing film.

10. The method of claim 9 wherein the above steps define one cycle for the method and the cycle can be repeated until the desired thickness of the silicon-containing film is obtained.

11. The method of claim 1 wherein the silicon-containing film is selected from the group consisting of a silicon nitride, a silicon carbide, and a carbon-doped silicon nitride.

12. The method of claim 1 wherein the at least one surface feature is selected from the group consisting of pores, trenches, shallow trench isolation (STI), vias, and reentrant features.

13. The method of claim 12 wherein the at least one surface feature has a width of 100 μm or less.

14. The method of claim 13 wherein the at least one surface feature has a width of 1 μm or less.

15. The method of claim 14 wherein the at least one surface feature has a width of 0.5 μm or less.

16. The method of claim 15 wherein the at least one surface feature has a width of 50 nm or less.

17. The method of claim 12 wherein the at least one surface feature has an aspect ratio of 0.1:1 or greater.

18. The method of claim 17 wherein the at least one surface feature has an aspect ratio of 1:1 or greater.

19. The method of claim 18 wherein the at least one surface feature has an aspect ratio of 10:1 or greater.

20. The method of claim 19 wherein the at least one surface feature has an aspect ratio of 20:1 or greater.

21. The method of claim 20 wherein the at least one surface feature has an aspect ratio of 40:1 or greater.

22. The method of claim 1 further comprising the step of thermally annealing the flowable liquid oligomer at one or more temperatures ranging from about 100° C. to about 1000° C. to densify at least a portion of the materials, followed by broadband UV treatment at the temperature ranging from 100° C. to 1000° C.

23. The method of claim 1 wherein the resultant silicon-containing film is exposed to a post-deposition treatment selected from the group consisting of hydrogen plasma, helium plasm, argon plasma, ammonia plasma, water (H 2 O) plasma, oxygen plasma, ozone (O 3 ) plasma, NO plasma, N 2 O plasma, carbon monoxide (CO) plasma, carbon dioxide (CO 2 ) plasma and combinations thereof, chemical treatment, ultraviolet light exposure, Infrared exposure, and electron beam exposure.

24. A method for depositing a silicon-containing film, comprising:

placing a substrate comprising at least one surface feature into a reactor;

adjusting the reactor to a first pressure;

introducing at least one organoaminosilane compound and at least one multifunctional organoamine compound into the reactor:

wherein the at least one organoaminosilane compound has the structure according to Formula I:

(R 1 R 2 N) 4-n Si—R 3 n   (I),

wherein R 1 , R 2 and R 3 are selected from the group consisting of hydrogen, C 1 to C 10 linear or branched alkyl, cyclic alkyl, alkenyl, alkynyl, and aryl;

wherein n=0, 1, 2, 3;

wherein at least one of R 1 , R 2 and R 3 is not hydrogen;

wherein the at least one multifunctional organoamine compound has the structure according to Formula II:

NR 4 R 5 R 6   (II),

wherein R 4 , R 5 and R 6 are each independently selected from the group consisting of H, a C 1 -C 4 alkylmonoamino group, a C 1 -C 4 alkyldiamino group, and a C 1 -C 4 alkyltriamino group; and

wherein at least one of R 4 , R 5 and R 6 is not hydrogen;

permitting the at least one organoaminosilane compound, and the at least one multifunctional organoamine compound, to react and form an oligomer that condenses on the substrate because its vapor pressure is less than the first pressure to form a flowable liquid oligomer;

wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature;

wherein the at least one multifunctional organoamine compound is ethylenediamine and at least one additional multifunctional organoamine compound selected from the group consisting of

and

wherein the at least one organoaminosilane compound is tris-isopropylaminosilane.