Method for fabricating semiconductor device
A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.
1. A method for fabricating a semiconductor device, the method comprising:
forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films;
forming a channel hole passing through the mold structure;
forming a vertical channel structure within the channel hole;
exposing a surface of the interlayer insulating films by removing the sacrificial films;
forming an aluminum oxide film along a surface of the interlayer insulating films;
forming a TiON continuous film on the aluminum oxide film; and
nitriding the TiON continuous film to form a TiN film.
2. The method as claimed in claim 1 , wherein a thickness of the TiON continuous film is greater than 0 angstroms to 20 angstroms.
3. The method as claimed in claim 1 , wherein the vertical channel structure includes:
a channel layer formed into a shape of a cup within the channel hole;
a core layer filling an interior of the channel layer; and
an insulating film surrounding an exterior of the channel layer.
4. The method as claimed in claim 3 , wherein the insulating film of the vertical channel structure includes:
a tunnel insulating layer formed on the channel layer;
a charge trap layer formed on the tunnel insulating layer; and
a blocking insulating layer formed on the charge trap layer.
5. The method as claimed in claim 1 , wherein nitriding the TiON continuous film includes NH 3 annealing, N 2 plasma, or rapid thermal processing.
6. The method as claimed in claim 1 , further comprising forming a metal film on the TiN film.
7. The method as claimed in claim 6 , wherein the metal film includes tungsten.
8. The method as claimed in claim 7 , wherein forming the metal film includes using WF 6 as a precursor.
9. The method as claimed in claim 1 , wherein a concentration of N in the TiON continuous film is less than a concentration of O in the TiON continuous film.