Product method of thin-film transistor, thin-film transistor, display apparatus, and fingerprint recognition unit

1. A fingerprint recognition unit, comprising:

a substrate;

a photosensitive device, comprising:

a first electrode on the substrate;

a second electrode on the substrate; and

a photoelectric semiconductor on a side of the first electrode away from the substrate,

wherein the first electrode comprises a metal layer deposited on the substrate and an indium zinc oxide layer covering the metal layer, an orthographic projection of the first electrode on the substrate does not overlap an orthographic projection of the second electrode on the substrate, and an orthographic projection of the indium zinc oxide layer on the substrate is within a range of an orthographic projection of the metal layer on the substrate;

a switch device, comprising:

a gate electrode on the substrate;

a semiconductor channel situated above the gate electrode; and

a source electrode and a drain electrode separately connected to one of two ends of the semiconductor channel;

wherein the second electrode is situated on a side of the first electrode away from the switch device, an orthographic projection of the photosensitive device on the substrate does not overlap an orthographic projection of the switch device on the substrate, the drain electrode is electrically connected to the first electrode, and the first electrode is electrically connected to the second electrode.

2. The fingerprint recognition unit according to claim 1 , wherein the indium zinc oxide layer has a thickness in a range of 500 to 1000 Å.

3. The fingerprint recognition unit according to claim 1 , wherein the indium zinc oxide layer comprises 20-90 wt % of In 2 O 3 and 10-80 wt % of ZnO, based on the total weight of the indium zinc oxide layer.

4. The fingerprint recognition unit according to claim 1 , further comprising a first ITO film on the photoelectric semiconductor.

5. The fingerprint recognition unit according to claim 4 , further comprising an insulating layer covering the gate electrode, the photoelectric semiconductor, the first electrode, the second electrode, and the periphery of the first ITO film, and the source electrode, the drain electrode and the semiconductor channel are above the insulating layer.

6. The fingerprint recognition unit according to claim 5 , further comprising:

a first transparent dielectric layer covering the source electrode, the drain electrode and the insulating layer;

a resin layer covering the first transparent dielectric layer;

a light shielding layer which covers the resin layer and is located above the semiconductor channel; and

a second transparent dielectric layer covering the light shielding layer.

7. The fingerprint recognition unit according to claim 6 , wherein there is a via hole above the first ITO film that penetrates the insulating layer and the first transparent dielectric layer, the first ITO film is connected to a second ITO film above the first transparent dielectric layer through the via hole, and the second ITO film is electrically connected to the second electrode.

8. The fingerprint recognition unit according to claim 6 , wherein an orthographic projection of the semiconductor channel on the substrate and an orthographic projection of the gate electrode on the substrate are within a range of an orthographic projection of the light shielding layer on the substrate.

9. The fingerprint recognition unit according to claim 1 , wherein there is no indium zinc oxide layer above the second electrode.

10. A display apparatus having a function of fingerprint recognition, comprising the fingerprint recognition unit as claimed in claim 1 .