Hybrid photo-electrochemical and photo-voltaic cells
This disclosure provides systems, methods, and apparatus related to a hybrid photo-electrochemical and photo-voltaic cell. In one aspect, device includes a substrate comprising a semiconductor, a transparent conductor disposed on the second surface of the substrate, a photoanode disposed on the transparent conductor, an electrolyte in electrical communication with the photoanode, and an electrode in contact with the electrolyte. The substrate is doped with a first n-type dopant. A first area of a first surface of the substrate is heavily doped with a first p-type dopant. A second area of the first surface of the substrate is heavily doped with a second n-type dopant. The second surface of the substrate is heavily doped with a second p-type dopant. The electrode is in electrical contact with the second area. The first area is in electrical contact with the second area through an electrical load.
1. A device comprising:
a substrate comprising a semiconductor, the substrate being doped with a first n-type dopant, a first area of a first surface of the substrate being heavily doped with a first p-type dopant, a second area of the first surface of the substrate being heavily doped with a second n-type dopant, a third area of the substrate being between the first area and the second area, a second surface of the substrate being heavily doped with a second p-type dopant;
a transparent conductor disposed on the second surface of the substrate;
a photoanode disposed on the transparent conductor;
an electrolyte in electrical communication with the photoanode; and
an electrode in contact with the electrolyte, the electrode being in electrical contact with the second area, the first area being in electrical contact with the second area through an electrical load.
2. The device of claim 1 , wherein the semiconductor is selected from a group consisting of silicon, germanium, gallium arsenide, cadmium telluride, and gallium indium phosphide.
3. The device of claim 1 , wherein the substrate is about 100 microns to 300 microns thick.
4. The device of claim 1 , wherein the first n-type dopant and the second n-type dopant are selected from a group consisting of phosphorus, arsenic, and antimony.
5. The device of claim 1 , wherein the first p-type dopant and the second p-type dopant are selected from a group consisting of aluminum and boron.
6. The device of claim 1 , wherein the semiconductor is doped to a level of about 10 14 atoms/cm 3 to 10 16 atoms/cm 3 .
7. The device of claim 1 , wherein the first area, the second area, and the second surface are doped to a level of about 10 18 atoms/cm 3 to 10 20 atoms/cm 3 .
8. The device of claim 1 , wherein the electrolyte comprises sodium hydroxide, potassium hydroxide, or sulfonic acid.
9. The device of claim 1 , wherein the photoanode is selected from a group consisting of gallium indium phosphide, iron oxide, and bismuth vanadate.
10. The device of claim 1 , wherein the electrode comprises a photocathode, and wherein the photocathode comprises gallium phosphide.
11. A device comprising:
a substrate comprising a semiconductor, the substrate being doped with a first p-type dopant, a first area of a first surface of the substrate being heavily doped with a first n-type dopant, a second area of the first surface of the substrate being heavily doped with a second p-type dopant, a third area of the substrate being between the first area and the second area, a second surface of the substrate being heavily doped with a second n-type dopant;
a transparent conductor disposed on the second surface of the substrate;
a photocathode disposed on the transparent conductor;
an electrolyte in electrical communication with the photocathode; and
an electrode in contact with the electrolyte, the electrode being in electrical contact with the second area, the first area being in electrical contact with the second area through an electrical load.
12. The device of claim 11 , wherein the semiconductor is selected from a group consisting of silicon, germanium, gallium arsenide, cadmium telluride, and gallium indium phosphide.
13. The device of claim 11 , wherein the substrate is about 100 microns to 300 microns thick.
14. The device of claim 11 , wherein the first n-type dopant and the second n-type dopant are selected from a group consisting of phosphorus, arsenic, and antimony.
15. The device of claim 11 , wherein the first p-type dopant and the second p-type dopant are selected from a group consisting of aluminum and boron.
16. The device of claim 11 , wherein the semiconductor is doped to a level of about 10 14 atoms/cm 3 to 10 16 atoms/cm 3 .
17. The device of claim 11 , wherein the first area, the second area, and the second surface are doped to a level of about 10 18 atoms/cm 3 to 10 20 atoms/cm 3 .
18. The device of claim 11 , wherein the electrolyte comprises sodium sulfate, sodium borate, or sulfonic acid.
19. The device of claim 11 , wherein the photocathode is selected from a group consisting of gallium phosphide, gallium indium phosphide, and cuprous oxide.
20. The device of claim 11 , wherein the electrode comprises a photoanode, and wherein the photoanode is selected from a group consisting of gallium indium phosphide, iron oxide, and bismuth vanadate.