Cavity formation using sacrificial material
A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.
1. A method for fabricating a semiconductor device, the method comprising:
providing a semiconductor substrate;
forming an oxide layer in the semiconductor substrate;
forming a transistor device over the oxide layer;
removing at least part of a backside of the semiconductor substrate;
applying a sacrificial material below the oxide layer;
covering the sacrificial material with an interface material; and
removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface material.
2. The method of claim 1 further comprising applying a substrate contact layer to a backside of the oxide layer, the substrate contact layer being at least partially exposed in the cavity after said removing the at least a portion of the sacrificial material.
3. The method of claim 1 further comprising applying a replacement substrate layer to the interface material to provide mechanical stability for the semiconductor device.
4. The method of claim 1 wherein said applying the sacrificial material involves forming a channel of the sacrificial material leading to a die boundary associated with the semiconductor device.
5. The method of claim 4 wherein said removing the at least a portion of the sacrificial material is performed at least partially through the channel.
6. The method of claim 1 wherein said removing the at least a portion of the sacrificial material involves evaporating the at least a portion of the sacrificial material.
7. The method of claim 1 further comprising removing a handle wafer from a front-side of a passivation layer disposed over the transistor device.
8. The method of claim 1 wherein the sacrificial material comprises nitride.
9. A semiconductor device comprising:
a transistor device implemented over an oxide layer;
a patterned form of sacrificial material disposed below the oxide layer and the transistor device; and
an interface layer covering at least a portion of a backside of the patterned form of sacrificial material.
10. The semiconductor device of claim 9 wherein the patterned form of sacrificial material includes a channel leading to an edge of a die associated with the semiconductor device.
11. The semiconductor device of claim 10 wherein the patterned form of sacrificial material is patterned to allow for removal thereof through evaporation by applying heat to the channel.
12. The semiconductor device of claim 9 further comprising a substrate contact layer disposed on a backside of the oxide layer in physical contact with the patterned form of sacrificial material.
13. The semiconductor device of claim 9 further comprising a replacement substrate layer applied to the interface layer, the replacement substrate layer providing mechanical stability for the semiconductor device.
14. The semiconductor device of claim 9 wherein the transistor device is part of a switching device.
15. The semiconductor device of claim 9 wherein the patterned form of sacrificial material comprises low-density oxide.
16. A semiconductor die comprising:
a semiconductor substrate;
an oxide layer disposed above the semiconductor substrate;
a transistor device implemented over the oxide layer; and
an interface layer disposed between the oxide layer and the semiconductor substrate, the interface layer having a cavity formed therein that is connected to a channel that leads to an edge of the semiconductor die.
17. The semiconductor die of claim 16 wherein the channel is patterned to allow for removal of sacrificial material disposed in a volume of the cavity to thereby form the cavity.
18. The semiconductor die of claim 16 , wherein the channel is patterned to allow for application of head thereto from the edge of the semiconductor die to thereby evaporate sacrificial material disposed therein.
19. The semiconductor die of claim 16 further comprising a substrate contact layer disposed on a backside of the oxide layer and at least partially exposed within the cavity.
20. The semiconductor die of claim 16 wherein the transistor device is part of a switching device.