Inspection and metrology using broadband infrared radiation
Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.
1. A system comprising:
an illumination source, wherein the illumination source comprises a broadband light source assembly, wherein the broadband light source assembly comprises:
a pump source configured to generate pump light of a selected wavelength; and
a nonlinear optical (NLO) assembly configured to generate broadband infrared (IR) radiation in response to the pump light generated by the pump source, wherein the NLO assembly includes a non-linear optical crystal configured to generate the broadband IR radiation including a full-width half maximum bandwidth of at least 1.5 μm;
a detector assembly; and
a set of optics configured to direct the IR radiation beneath a top hard mask surface of a stacked semiconductor structure, wherein the set of optics is further configured to direct a portion of the IR radiation from one or more portions of the stacked semiconductor structure beneath the top hard mask surface of the stacked semiconductor structure to one or more sensors of the detector assembly, wherein the set of optics includes one or more confocal apertures positioned within at least one of an illumination arm or collection arm of the set of optics, wherein the one or more confocal apertures are configured to provide depth resolution within the stacked semiconductor structure; and
a controller communicatively coupled to the one or more sensors of the detector assembly and the one or more confocal apertures, the controller including one or more processors configured to execute a set of program instructions stored in memory, the set of program instructions configured to cause the one or more processors to:
receive one or more signals from the one or more sensors of the detector assembly indicative of IR radiation from one or more portions of the stacked semiconductor structure beneath the top hard mask surface of the stacked semiconductor structure;
adjust the one or more confocal apertures; and
characterize a feature located multiple microns below the top hard mask surface of the stacked semiconductor structure based on the received one or more signals.
2. The system of claim 1 , wherein the pump source comprises a laser, and wherein the NLO assembly comprises a NLO crystal and one or more optical elements.
3. The system of claim 1 , wherein the pump source comprises a laser, and wherein the NLO assembly comprises an optical parametric oscillator (OPO) assembly.
4. The system of claim 1 , wherein the pump source comprises a laser, an NLO crystal, and one or more optical elements, and wherein the NLO assembly comprises an optical parametric oscillator (OPO) assembly.
5. The system of claim 1 , wherein the pump source comprises a laser and a first optical parametric oscillator (OPO) assembly, and wherein the NLO assembly comprises a second OPO assembly.
6. The system of claim 1 , wherein the NLO assembly is configured to generate broadband IR radiation centered on a wavelength of approximately two times a fundamental wavelength of the pump source.
7. The system of claim 1 , wherein the NLO assembly is configured to generate broadband IR radiation including a wavelength range from about 1 μm to about 3 μm.
8. The system of claim 1 , wherein the NLO assembly is configured to generate broadband IR radiation including a wavelength range from about 2 μm to about 5 μm.
9. The system of claim 1 , wherein the NLO assembly is configured to generate broadband IR radiation including a FWHM bandwidth of at least 3 μm.
10. The system of claim 1 , wherein the NLO assembly comprises one of periodically poled lithium niobate (PPLN), stoichiometric lithium tantalate (SLT), magnesium-doped SLT, and orientation-patterned gallium arsenide.
11. The system of claim 1 , wherein the set of optics is further configured to direct polarized IR radiation to the sample.
12. The system of claim 1 , wherein the pump source is configured to generate pump light with a wavelength of 3.3 μm, and wherein the NLO assembly comprises a GaAs optical parametric oscillator (OPO) assembly.
13. The system of claim 1 , wherein the pump source is configured to generate pump light with a wavelength of 960 nm, and wherein the NLO assembly comprises a PPLN optical parametric oscillator (OPO) assembly.
14. The system of claim 1 , wherein the set of optics is further configured to collect and analyze a polarization state of IR radiation reflected or scattered from the sample.
15. A method comprising:
generating pump light of a selected wavelength;
directing the pump light to a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light, wherein the NLO assembly includes a non-linear optical crystal configured to generate the broadband IR radiation including a full-width half maximum bandwidth of at least 1.5 μm;
directing and focusing the IR radiation beneath a top hard mask surface of a stacked semiconductor structure;
directing a portion of the IR radiation reflected or scattered from one or more portions of the stacked semiconductor structure beneath the top hard mask surface of the stacked semiconductor structure to a detector assembly;
adjusting one or more characteristics of one or more confocal apertures located within at least one of an illumination arm or a collection arm to provide depth resolution within the stacked semiconductor structure; and
characterizing a feature located multiple microns below a top hard mask surface of the stacked semiconductor structure based on the IR radiation reflected or scattered from the one or more portions of the stacked semiconductor structure beneath the top hard mask surface of the stacked semiconductor structure.
16. The method of claim 15 , wherein the generating broadband IR radiation generates radiation having a spectral range from about 1 μm to about 3 μm.
17. The method of claim 15 , wherein the generating broadband IR radiation generates radiation having a spectral range from about 2 μm to about 5 μm.
18. The method of claim 15 , wherein the NLO assembly is configured to generate broadband IR radiation including a FWHM bandwidth of at least 3 μm.
19. The method of claim 15 , wherein the NLO assembly includes an NLO crystal, wherein the NLO crystal comprises one of periodically poled lithium niobate (PPLN), stoichiometric lithium tantalate (SLT), magnesium-doped SLT, and orientation-patterned gallium arsenide.
20. The method of claim 15 , wherein the focusing focuses polarized IR radiation to the sample.
21. The method of claim 15 , wherein the computing a characteristic of the sample from the portion of IR radiation detected by the detector assembly comprises analyzing a polarization state of the IR radiation.
22. The method of claim 15 , wherein the generating pump light of a selected wavelength comprises:
generating pump light with a wavelength of 3.3 μm, and wherein the NLO assembly comprises a GaAS optical parametric oscillator (OPO) assembly.
23. The method of claim 15 , wherein the generating pump light of a selected wavelength comprises:
generating pump light with a wavelength of 960 nm, and wherein the NLO assembly comprises a PPLN optical parametric oscillator (OPO) assembly.