IP Library › Granted Patent US 10,304,872
Granted Patent B2
US 10,304,872 · App. 15/795,321 · Granted May 28, 2019

Semiconductor device

Inventor: Atsushi Umezaki (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/1255G09G3/14G09G3/32G09G3/36G11C19/00H01L29/7869H03B1/00H03K3/00H03K17/6871G09G2300/0426G09G2310/0286G09G2330/021
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Quick Facts
Patent No.
US 10,304,872
App. No.
15/795,321
Granted
May 28, 2019
Kind
B2
Abstract

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

Claims (99)

1. A semiconductor device comprising;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor; and

a capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,

wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring,

wherein one of a source and a drain of the second transistor is electrically connected to a third wiring,

wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,

wherein one of a source and a drain of the third transistor is electrically connected to the first wiring,

wherein a gate of the third transistor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor,

wherein a gate of the fourth transistor is electrically connected to a fourth wiring,

wherein one of a source and a drain of the fifth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor,

wherein a gate of the fifth transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the sixth transistor is electrically connected to the fourth wiring,

wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the second transistor,

wherein a first electrode of the capacitor is electrically connected to the fourth wiring, and

wherein a second electrode of the capacitor is electrically connected to the other of the source and the drain of the third transistor.

2. The semiconductor device according to claim 1 ,

wherein an inverter circuit comprises the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor and the capacitor.

3. The semiconductor device according to claim 2 ,

wherein the fourth wiring is an input terminal of the inverter circuit, and

wherein the second wiring is an output terminal of the inverter circuit.

4. The semiconductor device according to claim 1 ,

wherein the first wiring is a first power supply line, and

wherein the third wiring is a second power supply line.

5. A display device comprising;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor; and

a capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,

wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring,

wherein one of a source and a drain of the second transistor is electrically connected to a third wiring,

wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,

wherein one of a source and a drain of the third transistor is electrically connected to the first wiring,

wherein a gate of the third transistor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor,

wherein a gate of the fourth transistor is electrically connected to a fourth wiring,

wherein one of a source and a drain of the fifth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor,

wherein a gate of the fifth transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the sixth transistor is electrically connected to the fourth wiring,

wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the second transistor,

wherein a first electrode of the capacitor is electrically connected to the fourth wiring,

wherein a second electrode of the capacitor is electrically connected to the other of the source and the drain of the third transistor, and

wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor is a n-channel type transistor.

6. The display device according to claim 5 ,

wherein an inverter circuit comprises the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor and the capacitor.

7. The display device according to claim 6 ,

wherein the fourth wiring is an input terminal of the inverter circuit, and

wherein the second wiring is an output terminal of the inverter circuit.

8. The display device according to claim 5 ,

wherein the first wiring is a first power supply line, and

wherein the third wiring is a second power supply line.

9. A display device comprising;

a driver circuit comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor; and

a capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,

wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring,

wherein one of a source and a drain of the second transistor is electrically connected to a third wiring,

wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,

wherein one of a source and a drain of the third transistor is electrically connected to the first wiring,

wherein a gate of the third transistor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor,

wherein a gate of the fourth transistor is electrically connected to a fourth wiring,

wherein one of a source and a drain of the fifth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor,

wherein a gate of the fifth transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the sixth transistor is electrically connected to the fourth wiring,

wherein the other of the source and the drain of the sixth transistor is electrically connected to the gate of the second transistor,

wherein a first electrode of the capacitor is electrically connected to the fourth wiring,

wherein a second electrode of the capacitor is electrically connected to the other of the source and the drain of the third transistor, and

wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor is a n-channel type transistor.

10. The display device according to claim 9 ,

wherein an inverter circuit comprises the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor and the capacitor.

11. The display device according to claim 10 ,

wherein the fourth wiring is an input terminal of the inverter circuit, and

wherein the second wiring is an output terminal of the inverter circuit.

12. The display device according to claim 9 ,

wherein the first wiring is a first power supply line, and

wherein the third wiring is a second power supply line.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2017
From: UMEZAKI, ATSUSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 044375/0194 →
Priority Claims (1)
JP 2011-217150 · Sep 30, 2011 · national
Continuity (5)
Continuation 15247995 · Aug 26, 2016
Continuation 14594256 · Jan 12, 2015
Continuation 14222822 · Mar 24, 2014
Continuation 13606440 · Sep 7, 2012
Related Publication 20180053794A1 · Feb 22, 2018