Back-illuminated sensor with boron layer

1. A system for inspecting a sample, the system comprising:

at least one illumination relay configured to direct light generated by an illumination source onto the sample;

image relay optics configured to direct light outputs from the sample to at least one channel image mode relay; and

an image sensor configured to receive said light outputs from the channel image mode relay, the sensor including an image region including pixels disposed in a two-dimensional array on an epitaxial silicon membrane, the epitaxial silicon membrane including readout circuit elements formed on a first surface of the epitaxial silicon membrane and a pure boron layer disposed on an opposing second surface,

wherein the system is configured such that the readout circuit elements read out charges from the pixels that correspond to the light outputs directed onto the image region by the channel image mode relay.

2. The inspection system of claim 1 ,

wherein said at least one illumination relay comprises a first illumination relay configured to direct a first portion of the light generated by said illumination source to the sample, and a second illumination relay configured to direct a second portion of the light generated by said illumination source to the sample, and

wherein said at least one channel image mode relay comprises:

a first channel image mode relay configured to detect said first portion of said light that are either reflected from said sample or transmitted through said sample, and

a second channel image mode relay configured to detect said second portion of said light that are either reflected from said sample or transmitted through said sample.

3. The inspection system of claim 1 ,

wherein the image region includes a first plurality of said pixels disposed in a first side region and second plurality of said pixels disposed in a second side region, and

wherein the image sensor is configured such that a first group of said readout circuit elements reads out charges from the first plurality of said pixels while a second group of said readout circuit elements reads out charges from the second plurality of said pixels.

4. The inspection system of claim 1 , wherein each pixel of the image sensor comprises a p-type silicon layer and n-type silicon layer, and wherein said circuit elements are formed on the n-type silicon layer and said pure boron layer being disposed on the p-type silicon layer.

5. An inspection system for inspecting a sample, the inspection system comprising:

an illumination source configured to generate light;

optics including an objective lens, the optics configured to direct and focus said light generated by the illumination source onto the sample;

a detector configured to receive portions of the light redirected from the sample, and to output detector data based on said received portions of the light for analysis by a computing system,

wherein the optics are further configured to collect, direct, and focus the redirected light onto the detector, and

wherein the detector includes an array of image sensors, at least one image sensor in the array of image sensors including an image region including pixels disposed in one of a one-dimensional array and a two-dimensional array on an epitaxial silicon membrane having opposing first and second surfaces, the epitaxial silicon membrane including readout circuit elements formed on the first surface and configured to generate said detector data based on said received portions of the light, and the epitaxial silicon membrane including a pure boron layer disposed on the opposing second surface.

6. The inspection system of claim 5 ,

wherein the array of image sensors include a first row of space-apart image sensors and a second row of spaced-apart image sensors, and

wherein said first row is offset relative to said second row such that a first image sensor of said first row is aligned with a space separating second and third image sensors of the second row.

7. The inspection system of claim 6 , wherein a width of the first sensor is equal to or greater than the space separating the second and third image sensors.

8. The inspection system of claim 5 , wherein the at least one image sensor further comprises an anti-reflection coating deposited on the boron layer.

9. The inspection system of claim 5 , wherein the illumination source comprises a laser-pumped plasma light source.

10. An inspection system comprising:

an illumination source configured to generate light;

optics including an objective lens, the optics configured to direct and focus said light generated by the illumination source onto one of a line-shaped region of the sample and multiple spot-type regions on the sample;

a detector configured to receive portions of the light redirected from the sample,

wherein the optics are further configured to collect, direct, and focus the redirected light onto the detector, and

wherein the detector includes an image sensor formed on a semiconductor membrane including an epitaxial layer having opposing first and second surfaces, said image sensor including an image region including pixels disposed in one of a one-dimensional array and a two-dimensional array on the first surface of the epitaxial silicon membrane, and a pure boron layer disposed on the opposing second surface of the epitaxial layer.

11. The inspection system of claim 10 , wherein the image sensor comprises a line sensor.

12. The inspection system of claim 11 , wherein the line sensor comprises an electron-bombarded line sensor.

13. The inspection system of claim 10 , wherein the image sensor comprises a two-dimensional array sensor.

14. The inspection system of claim 13 , wherein the image sensor comprises an electron-bombarded two-dimensional array sensor.