Galvanic signal path isolation in an encapsulated package using a photonic structure
An encapsulated package is provided that includes a pair integrated circuit (IC) die. A radio frequency (RF) circuit on one of the IC die is operable to transmit an RF signal having a selected frequency. An RF circuit on the other IC die is operable to receive the RF signal Encapsulation material encapsulates the IC die. A photonic waveguide couples between the RF transmitter and RF receiver to form galvanic path isolation between the two IC die. The photonic waveguide is formed by a photonic structure within the encapsulation material.
1. A device, comprising:
a first integrated circuit (IC) die having an electromagnetic transmitter circuit, the electromagnetic transmitter circuit having an output configured to emit an electromagnetic signal;
a second IC die having an electromagnetic receiver circuit, the electromagnetic receiver circuit having an input configured to receive the electromagnetic signal, the second IC die spaced apart from the first IC die;
a leadframe having first and second die attach pads, the first die attach pad separated from the second die attach pad;
a photonic structure including a photonic waveguide coupled between the output of the electromagnetic transmitter circuit and the input of the electromagnetic receiver circuit, a portion of the photonic structure being located between the first IC die and the first die attach pad; and
an encapsulation material encapsulating the first IC die, the second IC die and the photonic waveguide.
2. The device of claim 1 , wherein the photonic waveguide includes a photonic bandgap (PBG) structure.
3. The device of claim 2 , wherein the PBG structure has a bandgap that includes a frequency of the electromagnetic signal.
4. The device of claim 2 , wherein the PBG structure is a multilayer PBG structure, in which layers of the multilayer PBG structure have respective photonic bandgaps with different frequency ranges.
5. The device of claim 4 , wherein the respective photonic bandgap of at least one of the layers of the multilayer PBG structure includes a frequency of the electromagnetic signal.
6. The device of claim 4 , wherein a first layer of the multilayer PBG structure includes a first matrix of periodically spaced nodes having a first intrinsic property within the encapsulation material, and a second layer of the multilayer PBG structure includes a second matrix of periodically spaced nodes having a second intrinsic property within the encapsulation material, and the encapsulation material has a third intrinsic property, and the first intrinsic property is different from the second intrinsic property and different from the third intrinsic property.
7. The device of claim 1 , wherein the photonic structure is a photonic resonant structure having a pass band that includes a frequency of the electromagnetic signal.
8. The device of claim 1 , wherein a frequency of the electromagnetic signal is an optical frequency.
9. The device of claim 1 , wherein a frequency of the electromagnetic signal is a radio frequency.
10. The device of claim 1 , wherein the second IC die is spaced apart from the first IC die by a separation distance that exceeds a voltage breakdown distance.
11. The device of claim 1 , wherein the photonic structure includes a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material has a first intrinsic property, and the nodes have a second intrinsic property that is different from the first intrinsic property.
12. The device of claim 11 , wherein the nodes have a permittivity that is greater than a permittivity of the encapsulation material.
13. The device of claim 1 , wherein the photonic structure includes a diffusion of particles within the encapsulation material, the encapsulation material has a first intrinsic property, and the nodes have a second intrinsic property that is different from the first intrinsic property.
14. The device of claim 1 , wherein the photonic waveguide has a rectangular cross section in which a long side of the cross section is twice as long as a short side of the cross section.
15. A method, comprising:
forming a photonic structure including a photonic waveguide;
through a portion of the photonic structure, attaching a first integrated circuit (IC) die having an electromagnetic transmitter to a first die attach pad of a leadframe, the portion of the photonic structure being located between the first IC die and the first die attach pad;
attaching a second IC die having an electromagnetic receiver to a second die attach pad of the leadframe, in which the first die attach pad is separated from the second die attach pad, the first IC die is spaced apart from the second IC die, and the photonic waveguide is coupled between an output of the electromagnetic transmitter and an input of the electromagnetic receiver; and
with an encapsulation material, encapsulating the first IC die, the second IC die and the photonic waveguide.
16. The method of Claim 15 , wherein forming the photonic structure comprises forming a matrix of periodically spaced nodes within the encapsulating material, in which the encapsulation material has a first intrinsic property, and the nodes have a second intrinsic property that is different from the first intrinsic property.
17. The method of Claim 15 , wherein forming the photonic structure comprises:
forming a first matrix of periodically spaced nodes within the encapsulating material, the first matrix having a first lattice constant; and
forming a second matrix of periodically spaced nodes within the encapsulating material, the second matrix having a second lattice constant.
18. The method of Claim 15 , wherein forming the photonic structure comprises diffusing particles within the encapsulating material, in which the encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.