Organic light emitting display device with improved aperture ratio and method for manufacturing the same

1. A display device, comprising:

a transparent substrate;

a conductive line on the substrate, the conductive line including at least one of a reference line or a power line;

a jumping line on the substrate electrically connected to the conductive line wherein the jumping line is formed of transparent conductive material, and

a plurality of sub pixels on the substrate, each sub pixel comprising:

a light emitting element on the substrate; and

a first thin film transistor (TFT) on the substrate, the first TFT including an active layer and a first electrode electrically connected to the active layer, wherein the first electrode includes:

a first conductive layer formed of transparent conductive material, the first conductive layer including a first portion and a second portion, and

a second conductive layer contacting the first portion of the first conductive layer,

a sensing transistor electrically connected to the light emitting element on the substrate;

wherein the second portion of the first conductive layer is disposed below the light emitting element, and does not contact the second conductive layer,

wherein the jumping line protrudes from the reference line towards each sub-pixel region of the plurality of sub pixels parallel to a scan line to connect the reference line to the sensing transistor, or the jumping line protrudes from the power line toward each sub-pixel region parallel to a scan line to connect the power line to the first TFT.

2. The display device of claim 1 , wherein the pixel further comprises an insulating layer on the first electrode, wherein the insulating layer contacts a top surface of the second conductive layer, and contacts a top surface of the second portion of the first conductive layer.

3. The display device of claim 1 , wherein the pixel further comprises an insulating layer on the substrate formed with an opening, and wherein the second portion of the first conductive layer is disposed in the opening.

4. The display device of claim 3 , wherein the light emitting element includes an anode electrode, and the anode electrode contacts the second portion of the first conductive layer.

5. The display device of claim 3 , wherein the pixel further comprises a third conductive layer below the insulating layer, wherein the third conductive layer is formed of transparent conductive material, and wherein the second portion of the first conductive layer contacts a portion of the third conductive layer exposed through the opening.

6. The display device of claim 5 , wherein the pixel further comprises a storage capacitor below the light emitting element, and wherein the third conductive layer is a lower storage electrode of the storage capacitor.

7. The display device of claim 5 , wherein the pixel further comprises a driving TFT for driving the light emitting element, and wherein the third conductive layer extends from at least a part of a gate electrode of the driving transistor.

8. The display device of claim 1 , wherein the second conductive layer is formed of opaque metal.

9. The display device of claim 1 , wherein the conductive line extends in a first direction, and

wherein the jumping line extends in a second direction different from the first direction.

10. The display device of claim 9 , wherein a portion of the jumping line is disposed below the light emitting element.

11. The display device of claim 9 , wherein the conductive line is a power line and the first TFT is a driving transistor for driving the light emitting element, and wherein the jumping line is electrically connected to the first TFT.

12. The display device of claim 9 , wherein the first TFT includes a gate electrode, and the jumping line is formed in a same layer as a part of the gate electrode.

13. A method of manufacturing a display device, comprising:

forming an active layer of a first thin film transistor (TFT) on a substrate;

forming a conductive line on the substrate, the conductive line including at least one of a reference line or a power line;

forming a jumping line on the substrate electrically connected to the conductive line, wherein the jumping line is formed of transparent conductive material,

forming a first conductive layer of a first electrode of the first TFT electrically connected to the active layer, wherein the first electrode includes a first conductive layer formed of transparent conductive material, and includes a second conductive layer that contacts a first portion of the first conductive layer; and

forming a light emitting element electrically connected to a sensing transistor on the substrate,

wherein a second portion of the first conductive layer is disposed below the light emitting element, and does not contact the second conductive layer,

wherein the jumping line protrudes from the reference line toward each sub-pixel region of the plurality of sub pixels parallel to a scan line to connect the reference line to the sensing transistor, or the jumping line protrudes from the power line toward each sub-pixel region parallel to a scan line to connect the power line to the first TFT.

14. The method of claim 13 , wherein forming the first electrode further comprises:

depositing a first conductive pattern formed of the transparent conductive material on the substrate;

depositing a second conductive pattern on the first conductive pattern;

patterning the first conductive pattern and the second conductive pattern to form the first conductive layer and a third conductive pattern on the first conductive layer; and

etching a part of the third conductive pattern to form the second conductive layer and expose the second portion of the first conductive layer.

15. The method of claim 13 , further comprising forming an insulating layer on the first electrode, wherein the insulating layer contacts a top surface of the second conductive layer, and contacts a top surface of the second portion of the first conductive layer.

16. The method of claim 13 , further comprising:

forming an insulating layer on the substrate; and

forming an opening in the insulating layer,

wherein the second portion of the first conductive layer is disposed in the opening.

17. The method of claim 16 , wherein the light emitting element includes an anode electrode, and the anode electrode contacts the second portion of the first conductive layer.

18. The method of claim 13 , wherein the conductive line extends in a first direction, and

wherein the jumping line extends in a second direction different from the first direction.

19. The method of claim 18 , wherein a portion of the jumping line is disposed below the light emitting element.

20. A display device, comprising:

a transparent substrate;

a conductive line on the substrate;

a jumping line on the substrate electrically connected to the conductive line wherein the jumping line is formed of transparent conductive material, and

a plurality of sub pixels on the substrate, each sub pixel comprising:

a light emitting element on the substrate; and

a first thin film transistor (TFT) on the substrate, the first TFT including an active layer and a first electrode electrically connected to the active layer, wherein the first electrode includes:

a first conductive layer formed of transparent conductive material, the first conductive layer including a first portion and a second portion, and

a second conductive layer contacting the first portion of the first conductive layer,

a sensing transistor electrically connected to the light emitting element on the substrate;

wherein the second portion of the first conductive layer is disposed below the light emitting element, and does not contact the second conductive layer,

wherein the conductive line is a reference line electrically connected to the sensing transistor, and wherein the jumping line is electrically connected to the sensing transistor.