Thin-film transistor substrate
A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.
1. A thin-film transistor substrate, comprising:
a substrate;
a thin-film transistor above the substrate; and
a capacitor above the substrate and electrically connected with the thin-film transistor,
wherein the capacitor includes:
a first electrode layer disposed above the substrate and including an electrically conductive material as a main component;
a second electrode layer above and opposed to the first electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and
an insulating layer between the first electrode layer and the second electrode layer,
an extension extending outward from at least a portion of an outer edge of the first electrode layer in plan view id provided to the first electrode layer, and
in plan view, the second electrode layer covers the outer edge of the first electrode layer where no extension is formed.
2. The thin-film transistor substrate according to claim 1 , further comprising:
an aluminum oxide layer disposed on the second electrode layer.
3. The thin-film transistor substrate according to claim 1 , wherein
the electrically conductive material is titanium or aluminum.
4. The thin-film transistor substrate according to claim 1 , wherein
a plan view shape of the second electrode layer and a plan view shape of the first electrode layer match each other.
5. The thin-film transistor substrate according to claim 1 , wherein
a plan view shape of the second electrode layer is equivalent to a sum of a plan view shape of the first electrode layer and a plan view shape of an additional region adjacent to the plan view shape of the first electrode layer, the additional region having a predetermined width.
6. The thin-film transistor according to claim 1 , wherein a distance between the substrate and the first electrode layer is less than a distance between the substrate and a channel of the thin-film transistor.
7. The thin-film transistor according to claim 1 , further comprising a splatter element on the insulating layer, wherein the splatter element comprises a same material as the second electrode layer, and the splatter element is completely separate from the second electrode layer.
8. The thin-film transistor according to claim 7 , wherein, in plan view, the splatter element exposes an entirety of the first electrode layer.
9. The thin-film transistor according to claim 7 , further comprising an aluminum oxide layer over the second electrode layer, wherein the aluminum oxide layer is between the splatter element and the second electrode layer.
10. The thin-film transistor according to claim 7 , wherein the splatter element directly contacts the insulating layer.
11. The thin-film transistor substrate according to claim 1 , wherein
the electrically conductive material is titanium or aluminum.
12. A thin-film transistor substrate, comprising:
a substrate;
a thin-film transistor above the substrate; and
a capacitor above the substrate and electrically connected with the thin-film transistor,
wherein the capacitor includes:
a first electrode layer above the substrate and including an electrically conductive material, wherein a distance between the substrate and the first electrode layer is less than a distance between the substrate and a channel of the thin-film transistor;
a second electrode layer above and opposed to the first electrode layer and including a conductive oxide semiconductor material; and
an insulating layer between the first electrode layer and the second electrode layer,
an extension extending from an outer edge of the first electrode layer, and in plan view, the second electrode layer covers the outer edge of the first electrode layer except the extension.
13. The thin-film transistor substrate according to claim 12 , further comprising:
an aluminum oxide layer disposed on the second electrode layer.
14. The thin-film transistor substrate according to claim 12 , wherein
a plan view shape of the second electrode layer and a plan view shape of the first electrode layer match each other.
15. The thin-film transistor substrate according to claim 12 , wherein
a plan view shape of the second electrode layer is equivalent to a sum of a plan view shape of the first electrode layer and a plan view shape of an additional region adjacent to the plan view shape of the first electrode layer, the additional region having a predetermined width.
16. The thin-film transistor according to claim 12 , wherein a dimension of the extension in a first direction parallel to a top surface of the substrate is less than a dimension of the first electrode layer in the first direction.
17. The thin-film transistor according to claim 12 , further comprising a splatter element on the insulating layer, wherein the splatter element comprises a same material as the second electrode layer, and the splatter element is completely separate from the second electrode layer.
18. The thin-film transistor according to claim 17 , wherein, in plan view, the splatter element exposes an entirety of the first electrode layer.
19. The thin-film transistor according to claim 17 , further comprising an aluminum oxide layer over the second electrode layer, wherein the aluminum oxide layer is between the splatter element and the second electrode layer.
20. The thin-film transistor according to claim 17 , wherein the splatter element directly contacts the insulating layer.