Semiconductor device
Each first p + -type region is provided between adjacent trenches embedded with a MOS gate and is in contact with a p-type base region. Second p + -type regions face a bottom and bottom corner portions of the trenches in a depth direction. An n-type CS region is a current spread layer provided between the first p + -type regions and the second p + -type regions. The n-type CS region is provided only in an active region and an end thereof is positioned at a boundary of the active region and an edge termination region. Further, the n-type CS region extends to be flush with or farther inward than an outermost first p + -type region. An outermost p ++ -type contact region extends from a drop between the active region and the edge termination region to the edge termination region and extends beyond the n-type CS region.
1. A semiconductor device including an active region through which current flows and an edge termination region, comprising:
a breakdown voltage structure in the edge termination region outside the active region;
a semiconductor substrate containing a semiconductor material having a bandgap wider than that of silicon;
a first semiconductor layer provided on a front surface of the semiconductor substrate, the first semiconductor layer containing the semiconductor material;
a second semiconductor layer provided in the active region, on a surface on a first side of the first semiconductor layer opposite a second side of the first semiconductor layer facing the semiconductor substrate, the second semiconductor layer containing the semiconductor material;
a first semiconductor region of the second conductivity type selectively provided in a surface layer on the first side of the first semiconductor layer, the first semiconductor region being in contact with a base region of the second semiconductor layer, an impurity concentration of the first semiconductor region being higher than that of the base region of the second semiconductor layer;
a second semiconductor region of the second conductivity type selectively provided in the first semiconductor layer to be separate from the second semiconductor layer and the first semiconductor region, an impurity concentration of the second semiconductor region being higher than that of the base region of the second semiconductor layer;
a third semiconductor region of the first conductivity type selectively provided in a surface layer on the first side of the first semiconductor layer to be in contact with the first semiconductor region and the second semiconductor region, an impurity concentration of the third semiconductor region being higher than that of a drift region of the first semiconductor layer adjacent to the semiconductor substrate;
a fourth semiconductor region of the first conductivity type selectively provided in the second semiconductor layer;
a fifth semiconductor region of the second conductivity type selectively provided in the second semiconductor layer, an impurity concentration of the fifth semiconductor region being higher than that of the base region of the second semiconductor layer;
a trench penetrating the fourth semiconductor region and the second semiconductor layer and reaching the third semiconductor region, an end of the trench located in the second semiconductor region in a depth direction;
a gate electrode provided in the trench, via a gate insulating film;
a first electrode in contact with the fourth semiconductor region; and
a second electrode provided on a rear surface of the semiconductor substrate, wherein
the third semiconductor region is in the active region,
the first semiconductor region is flush with an end of the active region, and
the third semiconductor region is either flush with an end of the first semiconductor region at the end of the active region or the third semiconductor region extends past the end of the first semiconductor region into the edge termination region.
2. The semiconductor device according to claim 1 , wherein
the third semiconductor region extends past the end of the first semiconductor region and terminates past the end of the first semiconductor region.
3. The semiconductor device according to claim 1 , wherein
the third semiconductor region is located only in the active region.
4. The semiconductor device according to claim 1 , wherein
the third semiconductor region is in contact with the breakdown voltage structure.
5. The semiconductor device according to claim 1 , comprising
a sixth semiconductor region of the first conductivity type in the first semiconductor layer, the sixth semiconductor region being in contact with the third semiconductor region, and an impurity concentration of the sixth semiconductor region being lower than that of the third semiconductor region, wherein
the breakdown voltage structure is provided in the sixth semiconductor region.
6. The semiconductor device according to claim 5 , wherein
the impurity concentration of the sixth semiconductor region is equal to or lower than that of the drift region of the first semiconductor layer.
7. The semiconductor device according to claim 5 , wherein
the third semiconductor region is an epitaxial layer provided between the drift region of the first semiconductor layer and the base region of the second semiconductor layer, and
the sixth semiconductor region is provided in a portion of the epitaxial layer outside the active region and penetrates the epitaxial layer in the depth direction.
8. The semiconductor device according to claim 1 , wherein
the breakdown voltage structure is constituted by a plurality of seventh semiconductor regions of the second conductivity type provided in the surface layer on the first side of the first semiconductor layer,
the plurality of seventh semiconductor regions have a concentric shape surrounding a periphery of the active region, and
respective impurity concentrations of the plurality of seventh semiconductor regions are lower than that of the base region of the second semiconductor layer and are inversely related to a distance of the plurality of seventh semiconductor regions from the active region.
9. The semiconductor device according to claim 1 , wherein
the semiconductor material is silicon carbide.