Structure and method for 3D Image sensor
An image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed on the first semiconductor substrate; a second semiconductor substrate having a logic circuit; a second interconnect structure formed on the second semiconductor substrate, wherein the first and the second semiconductor substrates are bonded together in a configuration that the first and second interconnect structures are sandwiched between the first and second semiconductor substrates; and a backside deep contact (BDCT) feature extended from the first interconnect structure to the second interconnect structure, thereby electrically coupling the logic circuit to the image sensors.
1. A method comprising:
performing an ion implantation process on a first substrate to form an implant layer in the first substrate, wherein a first interconnect structure is disposed over the first substrate;
coupling the first substrate to a second substrate, wherein a second interconnect structure is disposed over the second substrate;
removing a portion of the first substrate that includes the implant layer;
forming a trench extending through the first substrate, the first interconnect structure, and to the second interconnect structure; and
forming a conductive feature in the trench.
2. The method of claim 1 , wherein the first substrate includes a dielectric layer and a semiconductor layer prior to performing the ion implantation process on the first substrate, and
wherein the first substrate includes the dielectric layer, the semiconductor layer and the implant layer positioned between the dielectric layer and the semiconductor layer after the performing of the ion implantation process on the first substrate.
3. The method of claim 1 , wherein the removing of the portion of the first substrate that includes the implant layer includes performing an annealing process.
4. The method of claim 3 , wherein the performing of the annealing process includes performing a first annealing process at a first temperature and performing a second annealing process at a second temperature that is different than the first temperature.
5. The method of claim 4 , wherein the first temperature is less than the second temperature, and
wherein the first annealing process is performed prior to the second annealing process.
6. The method of claim 1 , wherein the removing of the portion of the first substrate that includes the implant layer includes performing an annealing process and a chemical mechanical polishing process.
7. The method of claim 1 , wherein the performing of the ion implantation process on the first substrate to form the implant layer in the first substrate occurs without using an implantation mask.
8. A method comprising:
performing a hydrogen ion implantation process on a first substrate to form a hydrogen layer therein, wherein a first interconnect structure is disposed over the first substrate;
coupling the first substrate to a second substrate, wherein a second interconnect structure is disposed over the second substrate;
removing a portion of the first substrate that includes the hydrogen layer;
forming a trench extending from the first interconnect structure to the second interconnect structure; and
forming a contact feature in the trench.
9. The method of claim 8 , wherein the removing of the portion of the first substrate that includes the hydrogen layer occurs after the coupling of the first substrate to the second substrate.
10. The method of claim 8 , further comprising:
forming a passivation layer directly on the contact feature; and
coupling a third substrate to the passivation layer.
11. The method of claim 8 , wherein the removing of the portion of the first substrate that includes the hydrogen layer includes performing a first annealing process and a second annealing process that is different than the first annealing process.
12. The method of claim 11 , wherein the removing of the portion of the first substrate that includes the hydrogen layer further includes performing a polishing process.
13. The method of claim 8 , wherein the first substrate includes a first semiconductor layer, a dielectric layer disposed over the first semiconductor layer, the hydrogen layer disposed over the dielectric layer and a second semiconductor layer disposed over the hydrogen layer after the performing of the hydrogen ion implantation process on the first substrate,
wherein the removing of the portion of the first substrate that includes the hydrogen layer includes removing the second semiconductor layer, the hydrogen layer and the dielectric layer to expose a portion of the first semiconductor layer.
14. A method comprising:
providing a first substrate and a second substrate, the first substrate including a dielectric layer and a semiconductor layer disposed on the dielectric layer;
performing an ion implantation process on the first substrate to form an implant layer in the first substrate, wherein the implant layer interfaces with the dielectric layer and the semiconductor layer, wherein a first interconnect structure is disposed over the first substrate;
coupling the first substrate to the second substrate, wherein a second interconnect structure is disposed over the second substrate;
removing at least a portion of the semiconductor layer to expose a portion of the implant layer;
removing the exposed portion of the implant layer;
forming a trench extending through the first substrate, the first interconnect structure, and to the second interconnect structure; and
forming a conductive feature in the trench.
15. The method of claim 14 , wherein the removing of the exposed portion of the implant layer further includes removing the dielectric layer from the first substrate, and
wherein the first substrate further includes another semiconductor layer, and wherein the another semiconductor layer is exposed after the removing of the dielectric layer from the first substrate.
16. The method of claim 14 , wherein the removing of the at least the portion of the semiconductor layer to expose the portion of the implant layer includes performing a thermal treatment process.
17. The method of claim 16 , wherein the performing of the thermal treatment process includes performing a first annealing process at a temperature of about 500° C.
18. The method of claim 17 , wherein the performing of the thermal treatment process includes performing a second annealing process at a temperature of about 1100° C., wherein the second annealing process occurs after the first annealing process.
19. The method of claim 14 , wherein the performing of the ion implantation process occurs without using an implantation mask, and
wherein the performing of the ion implantation process on the first substrate to form the implant layer includes performing a hydrogen ion implantation process.
20. The method of claim 14 , wherein the conductive feature extends though the first substrate, the first interconnect structure, and the second interconnect structure,
wherein the conductive feature has a first width in the first substrate,
wherein the conductive feature has a second width in the first interconnect structure, the second width being different than the first width, and
wherein the conductive feature has a third width in the second interconnect structure, the third width being different than the second width.