Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials
A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group III-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.
1. A semiconductor device structure, comprising:
a substrate;
an epitaxial overlying III-nitride semiconductor material device layer; and
an epitaxial etch-stop layer disposed between the substrate and the overlying III-nitride semiconductor material device layer;
wherein the overlying III-nitride semiconductor material device layer is formed directly on an upper surface of the etch-stop layer;
wherein the etch-stop layer is epitaxial ScAlN, ScGaN, ScAlGaN, ScN, ScInN, YAlN, YGaN, YN, YInN, or YAlGaN or a quaternary alloy thereof and forms an etch stop for a dry etching of the overlying III-nitride semiconductor material device layer; and
wherein at least a portion of the etch-stop layer remains in the structure after a predetermined controlled dry etching of at least a portion of the overlying III-nitride semiconductor material device layer.
2. The semiconductor device structure according to claim 1 , wherein the epitaxial etch-stop layer comprises a polycrystalline material layer.
3. The semiconductor device structure according to claim 1 , wherein the epitaxial overlying III-nitride semiconductor material device layer comprises single-crystal AlN, GaN, AlGaN, InN, or a ternary or quaternary alloy thereof.
4. The semiconductor device structure according to claim 1 , wherein the substrate comprises AlN, GaN, SiC, Si or sapphire.
5. The semiconductor device structure according to claim 1 , wherein the substrate, the epitaxial overlying III-nitride semiconductor material device layer, and the epitaxial etch-stop layer have a single-crystal structure.
6. The semiconductor device structure according to claim 1 , further comprising an intermediate epitaxial material layer disposed between the substrate and the epitaxial etch-stop layer.
7. A semiconductor device structure, comprising:
a carrier layer;
an epitaxial III-nitride semiconductor material device layer disposed on the carrier layer;
an epitaxial etch-stop layer disposed directly adjacent the epitaxial III-nitride semiconductor material device layer; and
an intermediate epitaxial material layer disposed directly adjacent the epitaxial etch-stop layer;
wherein the epitaxial etch-stop layer is epitaxial SLAIN, ScGaN, ScAlGaN, ScN, ScInN, YAlN, YGaN, YN, YInN, or YAlGaN or a quaternary alloy thereof and forms an etch stop for a dry etching of the intermediate epitaxial layer; and
wherein at least a portion of the etch-stop layer remains in the structure after a predetermined controlled dry etching of at least a portion of the intermediate epitaxial material layer.
8. The semiconductor device structure according to claim 7 , wherein the epitaxial etch-stop layer comprises a polycrystalline material layer.
9. The semiconductor device structure according to claim 7 , wherein the epitaxial III-nitride semiconductor material device layer comprises single-crystal AlN, GaN, AlGaN, InN, or a ternary or quaternary alloy thereof.
10. The semiconductor device structure according to claim 7 , wherein the carrier layer, the epitaxial III-nitride semiconductor material device layer, the intermediate epitaxial material layer, and the epitaxial etch-stop layer have a single-crystal structure.