Multi-angled deposition and masking for custom spacer trim and selected spacer removal
Multi-angled deposition and masking techniques are provided to enable custom trimming and selective removal of spacers that are used for patterning features at sub-lithographic dimensions. For example, a method includes forming a sacrificial mandrel on a substrate, and forming first and second spacers on opposing sidewalls of the sacrificial mandrel. The first and second spacers are formed with an initial thickness T S . A first angle deposition process is performed to deposit a material (e.g., insulating material or metallic material) at a first deposition angle A 1 to form a first trim mask layer on an upper portion of the first spacer and the sacrificial mandrel while preventing the material from being deposited on the second spacer. A spacer etch process is performed to trim the first spacer to a first thickness T 1 , which is less than T S , using the first trim mask layer as an etch mask.
1. A semiconductor device, comprising:
a pattern of features formed on a substrate;
wherein each feature in the pattern of features comprises a vertical semiconductor fin formed on the substrate;
wherein the pattern of features comprises adjacent vertical semiconductor fins of alternating widths, wherein the widths of the adjacent vertical semiconductor fins alternate between a first width and a second width such that (i) at least one of the vertical semiconductor fins having the first width is disposed between two adjacent vertical semiconductor fins having the second width and (ii) at least one of the vertical semiconductor fins having the second width is disposed between two adjacent vertical semiconductor fins having the first width; and
wherein the first and second widths of the vertical semiconductor fins comprise sub-lithographic dimensions of a given lithographic process as compared to a minimum critical dimension of at least one other feature of the semiconductor device, which is associated with the given lithographic process.
2. A semiconductor device, comprising:
a pattern of features formed on a substrate;
wherein each feature in the pattern of features comprises a space between metal lines formed in an insulating layer;
wherein the pattern of features comprises adjacent spaces of alternating widths, wherein the widths of the adjacent spaces alternate between a first width and a second width such that (i) at least one of the spaces having the first width is disposed between two adjacent spaces having the second width and (ii) at least one of the spaces having the second width is disposed between two adjacent spaces having the first width; and
wherein the first width and second width of the spaces comprise sub-lithographic dimensions of a given lithographic process as compared to a minimum critical dimension of at least one other feature of the semiconductor device, which is associated with the given lithographic process.
3. A semiconductor device, comprising:
a plurality of mandrels disposed on a substrate, each mandrel comprising opposing first and second sidewalls;
first vertically trimmed spacers disposed on the first sidewalls of the mandrels; and
second vertically trimmed spacers disposed on the second sidewalls of the mandrels;
wherein the first vertically trimmed spacers have a first width;
wherein the second vertically trimmed spacers have a second width;
wherein the first and second vertically trimmed spacers comprise a pattern of spacer features that form an etch mask which is disposed on an underlying layer to be patterned using the etch mask;
wherein the pattern of spacer features comprises adjacent first and second vertically trimmed spacers that alternate between the first and second widths such that (i) at least one of the first vertically trimmed spacers having the first width is disposed between two adjacent second vertically trimmed spacers having the second width and (ii) at least one of the second vertically trimmed spacers having the second width is disposed between two adjacent first vertically trimmed spacers having the first width; and
wherein the first and second widths of the first and second vertically trimmed spacers comprise sub-lithographic dimensions of a given lithographic process as compared to a minimum critical dimension of at least one other feature of the semiconductor device, which is associated with the given lithographic process.
4. The semiconductor device of claim 3 , wherein the first width and the second width are substantially equal.
5. The semiconductor device of claim 3 , wherein the first width and the second width are different.
6. The semiconductor device of claim 3 , wherein the mandrels comprise elongated features which are spaced apart by a pitch, wherein the pitch is about 60 nm or less.
7. The semiconductor device of claim 3 , wherein the mandrels comprise elongated features which have a third thickness, wherein the third thickness in a range of about 10 nm to about 15 nm.
8. The semiconductor device of claim 3 , wherein the mandrels comprise elongated features which have a height in a range of about 20 nm to about 50 nm.
9. The semiconductor device of claim 3 , wherein upper portions of the first vertically trimmed spacers and the second vertically trimmed spacers are recessed below upper surfaces of the mandrels.
10. The semiconductor device of claim 3 , wherein the mandrels comprise elongated features, wherein a portion of at least one first vertically trimmed spacer is removed along a length of the mandrel on which the at least one first vertically trimmed spacer is disposed.
11. The semiconductor device of claim 3 , wherein the mandrels comprise elongated features, wherein the first or second sidewall of at least one mandrel has no first vertically trimmed spacer or second vertically trimmed spacer disposed thereon.
12. The semiconductor device of claim 3 , wherein the first width and the second width are less than 15 nm.
13. The semiconductor device of claim 3 , wherein the first width and the second width are less than 10 nm.
14. The semiconductor device of claim 3 , wherein the mandrels comprise a first material, wherein the first and second vertically trimmed spacers comprise a second material, wherein the first and second materials have an etch selectivity with respect to each other.
15. The semiconductor device of claim 1 , wherein the first width and the second width are less than 15 nm.
16. The semiconductor device of claim 1 , wherein the first width and the second width are less than 10 nm.
17. The semiconductor device of claim 2 , wherein the first width and the second width are less than 15 nm.
18. The semiconductor device of claim 2 , wherein the first width and the second width are less than 10 nm.