Liquid semiconductor-halogen based electronics
According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.
1. A device, comprising:
a first electrode;
a second electrode spaced from the first electrode;
a well extending between the first electrode and the second electrode;
one or more chalcogens in the well, the one or more chalcogens being selected from the group consisting of sulfur, selenium, tellurium, and polonium; and
at least one halogen mixed with the one or more chalcogens in the well,
wherein the at least one halogen is present in an effective amount to suppress the melting point of the one or more chalcogens by at least 5 degrees Celsius.
2. The device as recited in claim 1 , wherein the one or more chalcogens includes selenium.
3. The device as recited in claim 1 , wherein the second electrode is patterned into a three dimensional structure and the first electrode is flat.
4. The device as recited in claim 1 , wherein a material of the first electrode is different from a material of the second electrode, wherein the device functions as a diode.
5. The device as recited in claim 1 , comprising an impermeable encapsulant encapsulating at least a portion of the one or more chalcogens mixed with the at least one halogen in the well.
6. The device as recited in claim 1 , comprising a radioactive material, wherein the radioactive material is configured to function as a structural material in the device.
7. The device as recited claim 1 , wherein the at least one halogen is present in an amount of greater than 1.0 at. % in a mixture of the one or more chalcogens mixed with the at least one halogen.
8. The device as recited in claim 1 , wherein the at least one halogen is selected from the group consisting of: chlorine, bromine, fluorine, and iodine.
9. The device as recited in claim 8 , wherein the halogen is present in an effective amount to suppress the melting point of the one or more chalcogens by at least 10 degrees Celsius.
10. The device as recited in claim 1 , wherein the one or more chalcogens mixed with the at least one halogen in the well and one of the electrodes form a heterojunction.
11. The device as recited in claim 10 , wherein the one or more chalcogens mixed with the at least one halogen in the well and the other of the electrodes form a second heterojunction.
12. The device as recited in claim 1 , wherein a surface of at least one of the electrodes facing the well has a non-planar, three dimensional structure for improving charge carrier collection efficiency.
13. The device as recited in claim 12 , wherein a height of the three dimensional structure is between about 1 μm and about 500 μm, wherein a width is between about 1 μm and about 50 μm, and a spacing is between about 1 μm and about 50 μm.
14. A device, comprising:
a first electrode;
a second electrode spaced from the first electrode;
a well extending between the first electrode and the second electrode; and
a mixture in the well, the mixture comprising at least one halogen and at least one semiconductor material selected from the group consisting of sulfur, selenium, tellurium, and polonium,
wherein the at least one halogen is present in an amount of greater than 1.0 at. % in the mixture to suppress the melting point of the semiconductor material.
15. The device as recited in claim 14 , wherein the semiconductor material is selenium.
16. The device as recited in claim 14 , comprising a radioactive material for providing thermal energy to melt the semiconductor material, wherein the radioactive material is separated from the mixture in the well.
17. The device as recited in claim 14 , wherein the at least one halogen is present in an effective amount to suppress the melting point of the at least one semiconductor material by at least 5 degrees Celsius.
18. The device as recited in claim 14 , the at least one halogen in the well is selected from a group consisting of: chlorine, bromine, fluorine, and iodine.
19. The device as recited in claim 18 , wherein the semiconductor material includes at least one of a pure chalcogen, wherein the halogen is present in an effective amount to suppress the melting point of the semiconductor material relative to the at least one of the pure chalcogen.
20. A heterojunction device, comprising:
a first electrode wherein the first electrode comprises a metal;
a second electrode spaced from the first electrode, wherein the second electrode comprises a first semiconductor material;
a well extending between the first electrode and the second electrode; and
a mixture in the well, the mixture comprising a liquid semiconductor material and at least one halogen wherein the liquid semiconductor material is a second semiconductor material, wherein the first semiconductor material is different from the second semiconductor material,
wherein the at least one halogen is present in an effective amount to suppress the melting point of the liquid semiconductor material by at least 5 degrees Celsius.