Semiconductor structure and the method of making the same
The present invention provides a semiconductor structure, the semiconductor structure includes a substrate defining a memory region and a transistor region, an insulating layer is disposed on the substrate, a 2D material layer disposed on the insulating layer, and disposed within the memory and the transistor region, parts of the 2D material layer within the transistor region is used as the channel region of a transistor structure, the transistor structure is disposed on the channel region. And a resistive random access memory (RRAM) located in the memory region, the RRAM includes a lower electrode layer, a resistance transition layer and an upper electrode layer being sequentially located on the 2D material layer and electrically connected to the channel region.
1. A semiconductor structure, comprising:
a substrate, a memory region and a transistor region are defined thereon;
an insulating layer disposed on the substrate;
a 2D material layer located on the insulating layer, and simultaneously located within the memory region and within the transistor region, wherein a portion of the 2D material layer within the transistor region is a channel region of a transistor, the transistor is disposed on the channel region within the transistor region; and
a resistive random access memory (RRAM) located within the memory region, the RRAM comprises a lower electrode layer, a resistive switching layer and an upper electrode layer sequentially located on a portion of the 2D material layer in the memory region, wherein the lower electrode layer contacts the 2D material layer directly, and the RRAM is electrically connected to the channel region.
2. The semiconductor structure of claim 1 , wherein the lower electrode layer is also located on a portion of the 2D material layer within the transistor region, and used as a source region and a drain of the transistor.
3. The semiconductor structure of claim 2 , further comprising a patterned dielectric layer disposed on the lower electrode layer within the transistor region.
4. The semiconductor structure of claim 3 , wherein the upper electrode layer is also located on the patterned dielectric layer within the transistor region, used as a gate of the transistor.
5. The semiconductor structure of claim 4 , wherein the transistor comprises the source region, the drain region, the patterned dielectric layer and the gate.
6. The semiconductor structure of claim 3 , wherein a portion of the patterned dielectric layer directly contacts the 2D material layer within the transistor region.
7. The semiconductor structure of claim 3 , wherein the material of the patterned dielectric layer is the same as the material of the resistance switching layer.
8. The semiconductor structure of claim 1 , wherein the upper electrode layer is located within the memory region and within the transistor region simultaneously, and a top surface of the upper electrode layer within the memory region is aligned with a top surface of the upper electrode layer within the transistor region.
9. The semiconductor structure of claim 8 , further comprising a conductive layer, disposed on the upper electrode layer within the transistor region and within the memory region, and a top surface of the conductive layer within the memory region is aligned with a top surface of the conductive layer within the transistor region.
10. The semiconductor structure of claim 1 , wherein the 2D material layer comprises graphene, phosphine or molybdenum disulfide (MoS 2 ).
11. A method for forming a semiconductor structure, comprising:
providing a substrate, a memory region and a transistor region are defined thereon;
forming an insulating layer on the substrate;
forming a 2D material layer located on the insulating layer and simultaneously located within the memory region and within the transistor region, wherein a portion of the 2D material layer within the transistor region is a channel region of a transistor, the transistor is disposed on the channel region within the transistor region; and
forming a resistive random access memory (RRAM) within the memory region, the RRAM comprises a lower electrode layer, a resistive switching layer and an upper electrode layer sequentially located on a portion of the 2D material layer in the memory region, wherein the lower electrode layer contacts the 2D material layer directly, and the RRAM is electrically connected to the channel region.
12. The method of claim 11 , wherein the lower electrode layer is also located on a portion of the 2D material layer within the transistor region, and used as a source region and a drain of the transistor.
13. The method of claim 12 , further comprising a patterned dielectric layer disposed on the lower electrode layer within the transistor region.
14. The method of claim 13 , wherein the upper electrode layer is also located on the patterned dielectric layer within the transistor region, used as a gate of the transistor.
15. The method of claim 14 , wherein the transistor comprises the source region, the drain region, the patterned dielectric layer and the gate.
16. The method of claim 13 , wherein a portion of the patterned dielectric layer directly contacts the 2D material layer within the transistor region.
17. The method of claim 13 , wherein the material of the patterned dielectric layer is the same as the material of the resistance switching layer.
18. The method of claim 11 , wherein the upper electrode layer is located within the memory region and within the transistor region simultaneously, and a top surface of the upper electrode layer within the memory region is aligned with a top surface of the upper electrode layer within the transistor region.
19. The method of claim 18 , further comprising a conductive layer, disposed on the upper electrode layer within the transistor region and within the memory region, and a top surface of the conductive layer within the memory region is aligned with a top surface of the conductive layer within the transistor region.
20. The method of claim 11 , wherein the 2D material layer comprises graphene, phosphine or molybdenum disulfide (MoS 2 ).