Cobalt top layer advanced metallization for interconnects
An advanced metal conductor structure is described. An integrated circuit device including a substrate having a patterned dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is disposed over the set of features in the patterned dielectric. A metal layer fills a first portion of the set of features and is disposed over the adhesion promoting layer. A ruthenium layer is disposed over the metal layer. A cobalt layer is disposed over the ruthenium layer fills a second portion of the set of features. The cobalt layer is formed using a physical vapor deposition process.
1. An integrated circuit device comprising:
a substrate including a dielectric layer patterned with a pattern includes a set of features in the dielectric layer for a set of metal conductor structures;
an adhesion promoting layer disposed on the set of features in the patterned dielectric layer;
a metal layer filling a first portion of the set of features disposed on the adhesion promoting layer;
a ruthenium layer disposed on the metal layer, wherein the ruthenium layer comprises a nitrogen enriched surface layer; and
a cobalt layer disposed on the ruthenium layer filling a second portion of the set of features, the second portion a remainder portion of the set of features not filled by the adhesion promoting layer, the metal layer and the ruthenium layer, wherein the cobalt layer is completely formed using a physical vapor deposition process.
2. The device as recited in claim 1 , wherein the adhesion promoting layer is a liner layer.
3. The device as recited in claim 1 , wherein the adhesion promoting layer is a nitrogen enriched layer formed in the patterned dielectric layer produced by a nitridation process.
4. The device as recited in claim 1 , wherein the adhesion promoting layer is comprised of a nitrogen enriched layer formed in the patterned dielectric layer produced by a nitridation process and a liner layer comprised of one or more materials selected from the group consisting of Ta, Ti, W, TaN, TiN and WN.
5. The device as recited in claim 1 , wherein the set of metal conductor structures are a set of conductive lines.
6. The device as recited in claim 1 , wherein a top surface of the cobalt layer in the set of metal conductor structures is coplanar with a top surface of the dielectric in field areas of the dielectric layer.
7. The device as recited in claim 1 , wherein the set of metal conductor structures are a set of conductive vias.
8. The device as recited in claim 1 , wherein the set of metal conductor structures are a set of conductive lines and a set of vias.
9. The device as recited in claim 1 , wherein the set of features have a first dimension of less than twenty nanometers.
10. The device as recited in claim 1 , wherein first metal layer has a thickness in the range of 2 nm to 20 nm and the thickness of the Co layer has a thickness in the range of 25 nm to 100 nm.