Parasitic capacitance reducing contact structure in a finFET

1. A method comprising:

creating, in a fin-Field Effect Transistor (finFET), a recess at a location of a fin, the fin being coupled to a gate of the finFET, the recess extending into a substrate interfacing with the gate;

filling the recess at least partially with a first conductive material;

insulating the first conductive material from the gate;

replacing the fin with a replacement structure;

connecting electrically, using a second conductive material, the replacement structure to the first conductive material;

insulating the second conductive material from a first surface of the finFET;

fabricating a first electrical contact structure on the first surface;

fabricating a second electrical contact structure on a second surface of the finFET, the second surface being on a different spatial plane than the first surface;

filling a first insulating material above the first conductive material; and

adjusting a level of the first insulating material such that at least a portion of the gate becomes uncovered from the first insulating material, the portion of the gate being where the fin couples with the gate.

2. The method of claim 1 , wherein the first surface and the second surface are substantially orthogonal to each other.

3. The method of claim 2 , wherein the first conductive material is electrically accessible on the second surface.

4. The method of claim 2 , wherein the second conductive material is electrically accessible on the second surface.

5. The method of claim 1 , wherein the second electrical contact structure provides a circuit electrically connectivity to the replacement structure.

6. The method of claim 1 , wherein the first electrical contact structure provides a circuit electrically connectivity to the gate.

7. The method of claim 1 , further comprising:

constructing an insulating barrier on a portion of the gate, the insulating barrier occupying a first portion of the recess.

8. The method of claim 1 , further comprising:

growing an epitaxy structure at the location of the fin, wherein the epitaxy structure is the replacement structure and has a semiconducting characteristic of the fin.

9. The method of claim 1 further comprising:

causing, as a part of filling the recess at least partially with the first conductive material, the first conductive material to be exposed for making electrical connection with the fin.

10. The method of claim 1 further comprising:

adjusting a height of the first conductive material in the recess such that the first conductive material remains entirely within the substrate.

11. The method of claim 1 , wherein the finFET comprises a plurality of gates including the gate, and wherein a plurality of fins including the fin couple the plurality of gates.

12. A computer usable program product comprising one or more computer-readable storage devices, and program instructions stored on at least one of the one or more storage devices, the stored program instructions comprising:

program instructions to create, in a fin-Field Effect Transistor (finFET), a recess at a location of a fin, the fin being coupled to a gate of the finFET, the recess extending into a substrate interfacing with the gate;

program instructions to fill the recess at least partially with a first conductive material;

program instructions to insulate the first conductive material from the gate;

program instructions to replace the fin with a replacement structure;

program instructions to connect electrically, using a second conductive material, the replacement structure to the first conductive material;

program instructions to insulate the second conductive material from a first surface of the finFET;

program instructions to fabricate a first electrical contact structure on the first surface;

program instructions to fabricate a second electrical contact structure on a second surface of the finFET, the second surface being on a different spatial plane than the first surface;

program instructions to fill a first insulating material above the first conductive material; and

program instruction to adjust a level of the first insulating material such that at least a portion of the gate becomes uncovered from the first insulating material, the portion of the gate being where the fin couples with the gate.

13. The computer usable program product of claim 12 , wherein the first surface and the second surface are substantially orthogonal to each other.

14. The computer usable program product of claim 13 , wherein the first conductive material is electrically accessible on the second surface.

15. The computer usable program product of claim 12 , wherein the program instructions are stored in a computer readable storage device in a data processing system, and wherein the program instructions are transferred over a network from a remote data processing system.

16. The computer usable program product of claim 12 , wherein the program instructions are stored in a computer readable storage device in a server data processing system, and wherein the program instructions are downloaded over a network to a remote data processing system for use in a computer readable storage device associated with the remote data processing system.

17. A computer system comprising one or more processors, one or more computer-readable memories, and one or more computer-readable storage devices, and program instructions stored on at least one of the one or more storage devices for execution by at least one of the one or more processors via at least one of the one or more memories, the stored program instructions comprising:

program instructions to create, in a fin-Field Effect Transistor (finFET), a recess at a location of a fin, the fin being coupled to a gate of the finFET, the recess extending into a substrate interfacing with the gate;

program instructions to fill the recess at least partially with a first conductive material;

program instructions to insulate the first conductive material from the gate;

program instructions to replace the fin with a replacement structure;

program instructions to connect electrically, using a second conductive material, the replacement structure to the first conductive material;

program instructions to insulate the second conductive material from a first surface of the finFET;

program instructions to fabricate a first electrical contact structure on the first surface;

program instructions to fabricate a second electrical contact structure on a second surface of the finFET, the second surface being on a different spatial plane than the first surface;

program instructions to fill a first insulating material above the first conductive material; and

program instruction to adjust a level of the first insulating material such that at least a portion of the gate becomes uncovered from the first insulating material, the portion of the gate being where the fin couples with the gate.