System and method for depositing a homogenous interface for PECVD metal-doped carbon hardmasks

1. A method for depositing a hardmask layer on a substrate, comprising:

nitridating a first layer of the substrate, wherein the first layer is selected from a group consisting of silicon dioxide and silicon nitride;

depositing an amorphous carbon layer on the nitridated first layer via plasma-enhanced chemical vapor deposition (PECVD);

depositing a monolayer on the amorphous carbon layer using gas mixture including a metal precursor gas with a reducing agent and without plasma; and

depositing a bulk metal-doped carbon hardmask layer on the monolayer.

2. The method of claim 1 , wherein a thickness of the amorphous carbon layer is in a range from 2 nm to 10 nm.

3. The method of claim 1 , wherein the reducing agent comprises a halide-based reducing agent.

4. The method of claim 1 , wherein the first layer includes silicon dioxide and the nitridating of the first layer creates a silicon oxynitride interface.

5. The method of claim 1 , wherein the first layer includes silicon nitride layer, wherein the silicon nitride layer includes a native silicon dioxide layer, and wherein the nitridating of the first layer creates a silicon oxynitride interface.

6. The method of claim 1 , wherein depositing the amorphous carbon layer includes supplying a gas mixture including a hydrocarbon precursor gas and an inert gas.

7. The method of claim 1 , wherein the metal precursor gas includes a metal selected from a group consisting of tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al).

8. The method of claim 7 , wherein the bulk metal-doped carbon hardmask layer includes the metal.

9. The method of claim 1 , wherein the method is performed in a plasma-enhanced chemical vapor deposition (PECVD) chamber.

10. The method of claim 1 , wherein nitridating comprises:

heating the substrate to a predetermined temperature in a temperature range from 350° C. to 550° C.; and

supplying an inert gas mixture include molecular nitrogen.

11. A method for depositing a hardmask layer on a substrate, comprising:

nitridating a first layer of the substrate,

wherein the first layer is selected from a group consisting of silicon dioxide and silicon nitride, and

wherein the nitridating includes heating the substrate to a predetermined temperature in a temperature range from 350° C. to 550° C., and supplying an inert gas mixture include molecular nitrogen;

depositing an amorphous carbon layer on the nitridated first layer via plasma-enhanced chemical vapor deposition (PECVD);

depositing a monolayer on the amorphous carbon layer having a thickness in a range from 2 nm to 10 nm using gas mixture including a metal precursor gas with a halide-based reducing agent and without plasma; and

depositing a bulk metal-doped carbon hardmask layer on the monolayer.

12. The method of claim 11 , wherein the first layer includes silicon dioxide and the nitridating of the first layer creates a silicon oxynitride interface.

13. The method of claim 11 , wherein the first layer includes silicon nitride layer, wherein the silicon nitride layer includes a native silicon dioxide layer, and wherein the nitridating of the first layer creates a silicon oxynitride interface.

14. The method of claim 11 , wherein depositing the amorphous carbon layer includes supplying a gas mixture including a hydrocarbon precursor gas and an inert gas.

15. The method of claim 11 , wherein the metal precursor gas includes a metal selected from a group consisting of tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al).

16. The method of claim 15 , wherein the bulk metal-doped carbon hardmask layer includes the metal.

17. The method of claim 11 , wherein the method is performed in a PECVD chamber.