Method of depositing a thin film
In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.
1. A method of depositing to a thin film, the method comprising:
providing a substrate having a pattern;
treating a surface of the substrate using a deposition-suppressing gas including fluorine to form a deposition-suppressing layer on the pattern to suppress depositing a first thin film;
forming the first thin film using a process gas on the substrate;
removing the deposition-suppressing layer; and
depositing a second thin film on the first thin film and the pattern by predetermined N-cycle.
2. The method of claim 1 , wherein the pattern comprises a via hole, a trench or a contact hole having an aspect ratio.
3. The method of claim 1 , wherein forming the first thin film comprises:
providing the pattern with a first process gas to adsorb the first process gas on the pattern;
purging the first process gas;
providing the pattern with a second process gas to react the first process gas with the second process gas; and
purging the second process gas.
4. The method of claim 3 , wherein the first process gas comprises a metal organic compound including silicon.
5. The method of claim 3 , wherein the second process gas comprises O 2 plasma, H 2 O, H 2 O 2 or O3.
6. The method of claim 3 , wherein the second process gas comprises NH 3 or N 2 .
7. The method of claim 1 , wherein the deposition-suppressing gas further comprises at least one of oxygen, carbon, hydrogen and nitrogen.
8. The method of claim 1 , wherein the deposition-suppressing gas comprises NF 3 , F 2 , CF 4 or CHF.
9. The method of claim 1 , wherein the process for treating the surface of the substrate and the process for forming the first thin film are repeatedly performed a plurality of times.
10. The method of claim 9 , wherein the treating the surface of the substrate is once performed, and the forming the first thin film comprises a first cyclic deposition process for repeatedly depositing the first thin film.
11. The method of claim 1 , wherein the removing the deposition-suppressing layer comprises triggering a reduction reaction using a reducing agent including a hydroxyl group.
12. The method of claim 1 , wherein removing the deposition-suppressing layer comprising treating with a plasma using argon.
13. The method of claim 1 , wherein the second thin film comprises a material substantially the same as that of the first thin film.
14. The method of claim 1 , wherein the second thin film comprises a material different from that of the first thin film.