Multilayer capacitor and method for manufacturing the same
A multilayer capacitor includes a capacitor body having a first surface and a second surface opposing each other, and a third surface and a fourth surface opposing each other while being connected to the first surface and the second surface. The multilayer capacitor includes dielectric layers, and a first internal electrode and a second internal electrode disposed alternately with the dielectric layers interposed therebetween and being exposed to the first and second surfaces, respectively; and an amorphous dielectric film disposed on at least the third and fourth surfaces of the capacitor body. The amorphous dielectric film may be in direct contact with the first and second internal electrodes.
1. A multilayer capacitor, comprising:
a capacitor body having a first surface and a second surface opposing each other, a third surface and a fourth surface opposing each other while being connected to the first surface and the second surface, and a fifth surface and a sixth surface opposing each other while being connected to the first to fourth surfaces, and the capacitor body including dielectric layers and a first internal electrode and a second internal electrode disposed alternately with the dielectric layers interposed therebetween, the first internal electrode and the second internal electrode being exposed to the first and second surfaces, respectively; and
an amorphous dielectric film disposed directly on only an entirety of each of the third to sixth surfaces among the first to sixth surfaces, the amorphous dielectric film being in direct contact with the first and second internal electrodes exposed from the third and fourth surfaces,
wherein the amorphous dielectric film includes at least one dielectric selected from the group consisting of Al 2 O 3 , parylene, and combinations thereof, and
the amorphous dielectric film has a uniform thickness of 5 μm or less but greater than 0 μm.
2. The multilayer capacitor of claim 1 , wherein the amorphous dielectric film is formed using a deposition process.
3. The multilayer capacitor of claim 2 , wherein the deposition process includes any one of chemical vapor deposition (CVD), atomic layer deposition (ALD), and molecular vapor deposition (MVD).
4. The multilayer capacitor of claim 1 , further comprising: first and second external electrodes disposed on the first and second surfaces of the capacitor body, respectively, and being electrically connected to the first and second internal electrodes exposed to the first and second surfaces, respectively.
5. The multilayer capacitor of claim 1 , wherein the amorphous dielectric layer and the dielectric layers of the capacitor body are composed of different materials.
6. The multilayer capacitor of claim 1 , wherein the dielectric layers of the capacitor body include a high-k crystalline ceramic powder selected from the group consisting of a barium titanate (BaTiO 3 )-based powder, a lead-composite perovskite powder, and a strontium titanate (SrTiO 3 )-based powder.
7. A multilayer capacitor, comprising:
a capacitor body having a first surface and a second surface opposing each other, a third surface and a fourth surface opposing each other while being connected to the first surface and the second surface, and a fifth surface and a sixth surface opposing each other while being connected to the first to fourth surfaces, and the capacitor body including dielectric layers and a first internal electrode and a second internal electrode disposed alternately with the dielectric layers interposed therebetween, the first internal electrode and the second internal electrode being exposed to the first and second surfaces, respectively;
first and second external electrodes disposed on the first and second surfaces of the capacitor body, respectively, and being electrically connected to the first and second internal electrodes exposed to the first and second surfaces, respectively; and
an amorphous dielectric film disposed directly on only an entirety of each of the third to sixth surfaces among the first to sixth surfaces and, the amorphous dielectric film being in direct contact with the first and second internal electrodes,
wherein the amorphous dielectric layer and the dielectric layers of the capacitor body are composed of different materials,
the amorphous dielectric film includes at least one dielectric selected from the group consisting of Al 2 O 3 , parylene, and combinations thereof, and
the amorphous dielectric film has a uniform thickness of 5 μm or less but greater than 0 μm.
8. The multilayer capacitor of claim 7 , wherein the dielectric layers of the capacitor body include a high-k crystalline ceramic powder selected from the group consisting of a barium titanate (BaTiO 3 )-based powder, a lead-composite perovskite powder, and a strontium titanate (SrTiO 3 )-based powder.