Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt
View Patent ↗The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co 2 (CO) 6 (R 3 C≡CR 4 ), where R 3 and R 4 are different organic moieties and R 4 is more electronegative or more electron withdrawing compared to R 3 .
1. A precursor or precursor composition for a vapor deposition process of a cobalt film, the precursor or precursor composition comprising:
a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of formula Co 2 (CO) 6 (R 3 C≡CR 4 ), wherein R 3 is a cyclic alkyl moiety or an aryl moiety and is free of halogen atoms and R 4 is a fluoroalkyl or fluoroaryl moiety.
2. A precursor or precursor composition according to claim 1 , wherein R 4 is —CF 3 .
3. A precursor or precursor composition according to claim 1 , wherein R 4 is selected from the group consisting of —CF 3 , —C 2 F 5 , and —C 6 F 5 moieties.
4. A precursor or precursor composition according to claim 1 , wherein R 3 is an aryl moiety.
5. A precursor or precursor composition according to claim 1 , wherein the precursor has a boiling point in the range of from 50° C. to 100° C.
6. A precursor or precursor composition according to claim 1 having a molecular purity of the bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of 99% or greater.
7. A precursor or precursor composition for a vapor deposition process of a cobalt film, the precursor or precursor composition comprising:
a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of formula Co 2 (CO) 6 (R 3 C≡CR 4 ), wherein R 3 is a cyclic alkyl or an aryl moiety and is free of halogen atoms and R 4 is an electron withdrawing organic moiety relative to R 3 comprising one or more halogen atoms.
8. A precursor or precursor composition according to claim 7 , wherein R 4 is a haloalkyl or haloaryl moiety.